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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 2373-2375 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Synchrotron radiation obtained from the 6-T vertical-wiggler source at the Photon Factory has been used to study dynamical x-ray diffraction in a nearly perfect germanium crystal under total external reflection conditions. A specially designed goniometer has allowed independent control of the glancing angle and the deviation angle from exact Bragg incidence. The rocking-curve profiles observed from slightly asymmetric Bragg planes as a function of glancing angle were found to be quite different for both the diffracted and specular beams. These profiles show unusual features arising from the excitation or de-excitation of the wave fields in shallow surface layers of the bulk crystal. Furthermore, GeK fluorescence signals measured during the Bragg reflection showed characteristic modulations, demonstrating the feasibility of new standing-wave experiments for determination of interface structures.
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  • 2
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Backreflection x-ray standing waves (BRXSW) and crystal truncation rod (CTR) scatterings have been used to probe the structure of heteroepitaxial CaSrF2 crystals on GaAs(111)B substrate. Coupled with the film-thickness information obtained from x-ray Fresnel reflectivity data, the combined x-ray standing wave and BRXSW data suggest one or both of the F and As layers missing from the heteroepitaxial interface. The CTR data support a missing F layer and interface (Ca, Sr) atoms occupying the T sites on GaAs(111) surface.
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  • 3
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An ultrahigh vacuum (UHV) diffractometer has been designed for studies of surface structures using the grazing-angle x-ray standing-wave method. The design is featured by a horizontal plane of diffraction for use at a vertical-wiggler source of synchrotron radiation. A sample is horizontally mounted in an UHV chamber (4×10−7 Pa) placed on crossed swivels, which control the glancing-incidence angle of x rays on the sample surface with a 50-μrad accuracy. The chamber accepts a sample from a transportation vessel under high vacuum. A beryllium window allows x-ray fluorescence to reach a semiconductor detector at short access. The whole assembly sits on a high-precision rotary table, regulating the sample Δθ angle with a reproducibility of better than 0.5 μrad required for control of the x-ray field profile. The system has been successfully applied to an accurate determination of the in-plane ordering of As atoms on a Si(111) surface with a 1×1 structure. © 1995 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Surface Science Letters 282 (1993), S. A210-A211 
    ISSN: 0167-2584
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
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  • 5
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Surface Science 282 (1993), S. 342-356 
    ISSN: 0039-6028
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
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  • 6
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 27 (1994), S. 647-647 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: In the paper by Nikulin, Sakata, Hashizume & Petrashen [J. Appl. Cryst. (1994), 27, 338–344], the lateral resolution in the two-dimensional maps was evaluated incorrectly. The correct value should be calculated from the full angular range of an individual transverse scan, which gives 0.325 μm in the experimental condition described, one half the old value.
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  • 7
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 27 (1994), S. 338-344 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Lattice distortions perpendicular to the surface in thin surface layers of ion-implanted (111) silicon crystals have been mapped as a function of depth and lateral position with resolutions of 0.05 and 0.65 μm, respectively. X-ray triple-crystal diffractometry data were collected near the fundamental 111 and satellite reflections from samples with periodic superstructure modulations in the lateral direction. 300 keV B+ ions implanted through surface mask windows are found to produce lattice distortions in a very thin layer of 0.15 μm thickness at 1.05 μm depth below the surface, with interplanar lattice spacings normal to the surface increased by several parts in 104. The distortions are appreciably extended in the lateral direction, suggesting diffusion of the ions. A 0.5 μm-thick thermal oxide strip is found to contract the interplanar spacing of substrate silicon crystal under the strip region by a few parts in 104, while the strain field created by the parallel oxide edges extends beyond a depth of 3 μm. A practical procedure is also described for arriving at a solution of the phase problem in the case of a strain field involving heavily distorted layers.
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  • 8
    Electronic Resource
    Electronic Resource
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 5 (1998), S. 1222-1226 
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: A versatile ultrahigh-vacuum chamber has been designed for grazing-angle X-ray standing-wave and diffraction experiments at the vertical wiggler source of the Photon Factory. Unlike at other sources, the vertically polarized X-rays from the wiggler favour the use of a horizontal scattering geometry. The X-ray chamber is equipped with a hemispherical beryllium window, which allows any scattering angle to be attained and secondary emissions to be measured. The chamber is of a compact design, sitting on a precision rotary table which is rotated for scans. Samples are introduced from a portable vessel. The whole procedure can be performed in a vacuum better than 10−7 Pa. The system has successfully been applied to a grazing-angle X-ray standing-wave experiment, which determined the dimer bond length and the domain structure of Si(001) surfaces deposited with monolayer arsenic.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 53 (1997), S. 781-788 
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: The grazing-angle X-ray standing-wave technique is applied to a 100 Å-thick Ca0.39Sr0.61F2 epilayer film on a GaAs(111) substrate. Experimental data collected with the (520) Bragg planes are explained by calculations taking into account dynamical diffraction in the thin film, but not by a homogeneous medium, only refracting and absorbing X-rays on the substrate. In this grazing-angle geometry, both X-ray penetration and extinction length are much smaller than in the conventional X-ray standing-wave geometry where epilayer diffraction does not significantly disturb the X-ray field produced by the bulk substrate. The results show that the epilayer (Ca, Sr)-atom planes perpendicular to the interface have laterally coincident positions with the (220) atomic planes of the substrate GaAs within an experimental uncertainty of 2% of the lattice spacing. The coherent fraction of 66% observed for the epilayer suggests a disordered Sr-atom distribution in the in-plane direction, which is ascribed to combined effects of thermal vibration, interstitial atoms and interfacial dislocations. It is the first time, to the authors' knowledge, that the grazing-angle standing-wave technique has been applied to the structure determination of an epilayer film.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 51 (1995), S. 375-384 
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Grazing-angle diffraction of X-rays by crystal planes normal to a surface generates dynamical (lattice-modulated) standing waves, which are used in this paper to determine the in-plane structure of arsenic adatoms on an Si (111) surface of the 1 × 1 structure. The X-ray field, formed by the interference of the incident, specular-reflected and Bragg-diffracted beams above the surface, has two components with and without intensity modulation in the direction of the reciprocal-lattice vector parallel to the surface. The two components behave differently as a function of X-ray glancing incidence angle on the surface in the vicinity of the critical angle for total external reflection. This property has been exploited to determine the ordering of the As atoms accurately using X-ray fluorescence signals observed from a sample in ultra-high vacuum at a synchrotron source. The data show highly ordered As atoms occupying the threefold-coordinated sites on the bulk-like Si (111) surface. Displaced arsenic positions are not supported by the observation. The conclusion is fairly insensitive to the vertical height of the overlayer atoms used in the analysis, in accordance with the slow variation of the field profile along the surface normal. The grazing-angle X-ray standing-wave method allows model-independent determination of the registry of foreign atoms at a crystal surface with a positional accuracy of a few hundredths of an Å.
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