Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
75 (1994), S. 2516-2521
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present a theoretical drift-and-diffusion study of the current-voltage characteristics of low-dimensional p-n junctions. Under low-level injection, low-dimensional p-n junctions exhibit current-voltage characteristics similar to those of three-dimensional diodes. Under high-level injection, the dependence of minority-carrier diffusion coefficients on the low-dimensional density of states may lead to the appearance of features in the small-signal properties. Such features become more pronounced as the temperature is lowered.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.356224
Permalink
|
Location |
Call Number |
Expected |
Availability |