Publication Date:
2012-09-25
Description:
A ferroelectric memristor Nature Materials 11, 860 (2012). doi:10.1038/nmat3415 Authors: André Chanthbouala, Vincent Garcia, Ryan O. Cherifi, Karim Bouzehouane, Stéphane Fusil, Xavier Moya, Stéphane Xavier, Hiroyuki Yamada, Cyrile Deranlot, Neil D. Mathur, Manuel Bibes, Agnès Barthélémy & Julie Grollier Memristors are continuously tunable resistors that emulate biological synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, although the details of the mechanism remain under debate. Purely electronic memristors based on well-established physical phenomena with albeit modest resistance changes have also emerged. Here we demonstrate that voltage-controlled domain configurations in ferroelectric tunnel barriers yield memristive behaviour with resistance variations exceeding two orders of magnitude and a 10 ns operation speed. Using models of ferroelectric-domain nucleation and growth, we explain the quasi-continuous resistance variations and derive a simple analytical expression for the memristive effect. Our results suggest new opportunities for ferroelectrics as the hardware basis of future neuromorphic computational architectures.
Print ISSN:
1476-1122
Electronic ISSN:
1476-4660
Topics:
Chemistry and Pharmacology
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Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
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Natural Sciences in General
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Physics
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