Electronic Resource
s.l. ; Stafa-Zurich, Switzerland
Solid state phenomena
Vol. 108-109 (Dec. 2005), p. 291-296
ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
We implanted 300keV Xenon in silicon oxide at doses ranging from 1x1016 to 5x1016/cm2. For the first time, we reported the formation and the thermal evolution of bubbles/cavities in SiO2. Characterization by cross-section transmission electron microscopy (XTEM) and Rutherford backscattering spectrometry (RBS) showed that bubbles/cavities remain present even after a 1100°C annealing, while Xe strongly desorbs out at that temperature. Our measurements provides unexpected dielectric constant (k) lower than 1.6. These results make this technique very attractive for low-k applications in Si technology. Keywords: low-k dielectric, rare gas implantation, silicon oxid
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/21/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.108-109.291.pdf
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