ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Using metalorganic vapor phase epitaxy to grow GaInAs/InP layers on masked InP substrates patterned with submicron square holes, we have fabricated in situ buried quantum dot arrays for the first time. Starting with mask openings ≥150 nm × 150 nm and utilizing the natural crystal habits to form low-index plane facetted pyramids inside the holes, 〈m1;&40q〉highly regular GaInAs quantum dots embedded in InP are obtained in a single growth step. 〈m1;&40q〉As verified by cathodoluminescence, the dots exhibit very high luminescence efficiencies, even at room temperature, owing to the absence of air-exposed or etch-damaged heterointerfaces.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.104891
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