ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Gold diffusion experiments were performed in three types of polycrystalline silicon over the temperature range 551–1265 °C by using the radiotracer 195Au and the serial sectioning technique. Depending on temperature, material structure, and diffusion time, different types of profiles were obtained, some of them being noninterpretable within the framework of classical solutions of Fick's equations in the presence of grain boundaries. In contrast, all these experimental profiles were successfully analyzed by using a new diffusion model applicable to host material/impurity systems revealing strong segregation effects and a negligible diffusion flux along the extended defects. At temperatures higher than about 1100 °C, effective diffusion coefficients slightly lower than true lattice diffusion coefficients previously reported in the literature were measured. Decreasing the temperature, the effective Au diffusivity depends on the structure of the samples, which leads to different Arrhenius plots exhibiting a downward curvature. A gold segregation enthalpy of about 141 kJ mol−1 was estimated from the observed diffusion behavior. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.363712
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