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  • 1
    Electronic Resource
    Electronic Resource
    Experimental Evaluation of Nonisothermal, First-Order Reaction Kinetics (1995)
    s.l. : American Chemical Society
    Macromolecules 28 (1995), S. 8729-8734 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma00130a004
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  • 2
    Electronic Resource
    Electronic Resource
    Occurrence of Salicyluric Acid in Milk (1962)
    [s.l.] : Nature Publishing Group
    Nature 194 (1962), S. 290-291 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Salicyluric acid was detected during attempts to decrease the development of oxidized flavours in milk by increasing the level of anti-oxidants or sequestrants of dietary origin. Since all rations fed to dairy cattle contain flavonoids, which are non-toxic and possess anti-oxidant properties, a ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/194290a0
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  • 3
    Electronic Resource
    Electronic Resource
    Surface-emitting two-dimensional coherent semiconductor laser array (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 331-333 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a new surface-emitting semiconductor structure, its fabrication, and its performance. Phase-locked emission takes place from a region much larger than the wavelength in two dimensions; therefore we term this device a two-dimensional coherent array. The key feature of our device is that the radiation is coupled directly from the active region using a nonresonant grating coupler, i.e., the grating is of noninteger order.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101899
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  • 4
    Electronic Resource
    Electronic Resource
    Spectroscopic ellipsometry characterization of strained and relaxed Si1−xGex epitaxial layers (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 239-250 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectroscopic ellipsometry has been used to study thick, relaxed and thin, strained epilayers of Si1−xGex on Si in the range 0.1〈x〈0.25. Dielectric functions of relaxed Si0.87Ge0.13 and Si0.8Ge0.2 have been obtained and long-wavelength absorption coefficient values, required for interference fringe fitting, shown to be higher than measured previously. The dielectric function of strained Si0.78Ge0.22 has been measured for the first time and the effects of strain on the critical points shown to be consistent with deformation potential theory. An interpolation procedure has been developed for the fitting of layer composition and thickness, and excellent agreement with conventional techniques obtained for a series of uncapped single epilayers. The surface roughness of Si1−xGex epilayers has been studied as a function of time and deposition temperature and shown to play an important role in the modeling. The application of the technique to the characterization of buried strained layers is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353896
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  • 5
    Electronic Resource
    Electronic Resource
    Using a hydrogen ambient to eliminate interfacial boron spikes in reduced temperature silicon epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1229-1231 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that the concentration of boron at the interface between a silicon epitaxial layer and an n-type Si substrate can be reduced to 109–1010 atoms cm−2, near the detection limit of secondary-ion mass spectrometry, when passivating oxide is desorbed from the substrate surface in a hydrogen ambient. Interfacial boron contamination is found to be much higher when the substrate surface oxide is desorbed in ultrahigh vacuum prior to growth, consistent with previous studies of Si molecular beam epitaxy. The hydrogen ambient is effective in removing boron only during the decomposition of the surface oxide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101663
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  • 6
    Electronic Resource
    Electronic Resource
    Spectroscopic ellipsometry of Si1−xGex epilayers of arbitrary composition 0≤x≤0.255 (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1114-1116 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Critical point (CP) transition energies have been calculated for strained Si1−xGex (0≤x≤0.255) between 2.5 and 3.5 eV from Lorentzian fits to the second differential of reference dielectric function spectra. E1 and E'0 transition energies are similar to those of the relaxed alloy. Comparison with deformation potential theory shows E1+Δ1 to be coincident with E'0 due to a strain-induced up shift in the former's transition energy. The reference spectra and CP transition energies are used in an interpolation procedure to analyze spectroscopic ellipsometry spectra of both uncapped and buried layers of strained Si1−xGex. Compositions and thicknesses are obtained in good agreement with alternative techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110823
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  • 7
    Electronic Resource
    Electronic Resource
    Analysis and modeling of the base currents of Si/Si1−xGex heterojunction bipolar transistors fabricated in high and low oxygen content material (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2823-2829 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comparison is made of the dc electrical characteristics of Si/Si1−xGex heterojunction bipolar transistors (HBTs) fabricated on high oxygen content material grown using molecular beam epitaxy and low oxygen content material grown using chemical vapor deposition. The base currents of Si/Si0.85Ge0.15 HBTs with a high oxygen content are significantly higher than those of comparable devices with a low oxygen content and the base currents of both are higher than those of silicon homojunction devices. In addition the base current in the low oxygen content devices increases significantly when the germanium concentration is increased from 15% to 23%. The roles of the lifetime in the base and the out-diffusion of the boron from the Si1−xGex base are investigated using a two-dimensional drift-diffusion device simulator. It is shown that the increased base currents in the HBTs are caused by recombination in the neutral base, and that the lifetime in the Si1−xGex is an important parameter in determining the base current. Modelling of the measured base currents indicates that the lifetime in the high oxygen content Si0.85Ge0.15 is reduced by a factor of approximately 15 compared with silicon, but in the low oxygen content Si0.77Ge0.23 by a smaller factor of approximately 4. Boron out-diffusion from the base is present in both the high and low oxygen content HBTs, but it appears to be significantly less in the former. A high oxygen content in Si1−xGex HBTs therefore has the disadvantage of decreasing the lifetime, but the advantage of decreasing the boron out-diffusion from the base. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360082
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  • 8
    Electronic Resource
    Electronic Resource
    1.3-μm light-emitting diode from silicon electron irradiated at its damage threshold (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1509-1511 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report 77-K electroluminescence from an irradiated carbon-rich silicon diode that has an internal quantum efficiency more than 103 times higher than that of band-to-band recombination in an unirradiated, but otherwise identical diode. This is achieved by creating optically active Cs-SiI-Cs complexes with room-temperature electron bombardment at an energy between the displacement thresholds for single vacancy and divacancy formation. Under these irradiation conditions, it is possible to create a high concentration of radiative defects without gross degradation of the diode's electrical characteristics. The technique could provide very large scale integration-compatible silicon light-emitting diodes for 1.3–1.6 μm all-silicon integrated optics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98618
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  • 9
    Electronic Resource
    Electronic Resource
    A model for heterogeneous growth of Si1−xGex films from hydrides (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3729-3732 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth rates for Si1−xGex films (0≤x≤0.19) have been measured between 610–750 °C using low pressure H2/SiH4/GeH4 mixtures and at different temperatures these rates show different dependencies on composition x. A model attributes this complex behavior to competition between an increasing rate for desorption of surface hydrogen and a decreasing sticking probability for the reactive hydrides as x increases. The latter effect is explicitly reported for the first time. GeH4 is found to be ∼4.7 times more reactive than SiH4, and relative surface hydrogen coverages on Si and Si0.87Ge0.13 films measured by secondary ion mass spectroscopy are compared with the model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348466
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  • 10
    Electronic Resource
    Electronic Resource
    Near-band-gap photoluminescence from pseudomorphic Si1−xGex single layers on silicon (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1407-1414 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The systematic study of band-edge luminescence in pseudomorphic Si/Si1−xGex/Si double-heterostructure layers is reported for a wide composition range, 0.12〈x〈0.24, for the first time. An analytical expression for the exciton energy gap at 4.2 K valid for x〈0.24 is derived from the no-phonon line energies: ESX(x) = 1.155−0.874x+0.376x2 eV. Addition of an expression for the exciton binding energy provides an approximation for the energy difference between the alloy valence band and the lowest conduction-band edge at low temperature. An exciton upshift of 16.9 meV due to quantum confinement is observed in a 6.3-nm Si0.83Ge0.17 alloy well. This is consistent with either type-I or type-II band alignment for which the conduction-band offset has a magnitude ||ΔEc|| ≤ 10 meV. The excitonic hole is closely confined in the alloy but the spectra suggest that the electron density in the silicon barriers is increased for the thin layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351262
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