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  • 1
    Electronic Resource
    Electronic Resource
    Liver Enzyme Activities of Rats Exposed to Ochratoxin A and T-2 Toxin with Antioxidants (2000)
    Springer
    Bulletin of environmental contamination and toxicology 64 (2000), S. 586-592 
    Details
    ISSN: 1432-0800
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s001280000043
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  • 2
    Electronic Resource
    Electronic Resource
    Dual Ion Beam Deposition and Characterizatio of TiO〈sub〉x〈/sub〉 Thin Films (1996)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 203 (Feb. 1996), p. 161-166 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/01/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.203.161.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Thermoreflectance of the GaSxSe1−x mixed crystals between 3 and 9 eV (1982)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 1 (1982), S. 751-777 
    Details
    ISSN: 0392-6737
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Sono stati misurati gli spettri di termoriflettanza tra 3 e 9 eV per una serie di cristalli misti GaSxSe1−x. I campioni erano lastrine monocristalline cresciute dalla fase vapore con il metodo del trasporto chimico. Le misure sono state effettuate con radiazione non polarizzata propagantesi all'incirca lungo l'asse di anisotropia dei cristalli, mentre la modulazione in temperatura è stata eseguita attorno a 65 K. Molte strutture degli spettri di riflettività sono state analizzate nella loro dipendenza dalla concentrazione di zolfo nei cristalli misti. Su questa base si è data una approfondita discussion degli spettri ottici di GaS e GaSe oltre la soglia fondamentale, e si sono ottenute nuove informazioni riguardanti i livelli elettronici di energia sia per questi composti che per l'InSe, che ha struttura cristallina analoga.
    Abstract: Резюме Были измерены спектры термоотражения в области между 3 и 9 эВ для ряда смешанных GaS x Se x−1 кристаллов. Образцы представляют монокристал-лические пластинки, вырращенные из пара химическнм методом. Измерения проведены с неполяризованным светвым пучком, распространяющимся приблизителщимся приблизительно рдоль оси анизотропии кристалла. Температура модулируется вблизи 65 К. Анализи-руются некоторы в спектрах отражения в зависимости от концентрации серы в смешанных кристаллах. Прородится подробное обсуждение оптических спектров в GaS и GaSe ниже основного края. Получается новая информадия об электронных энергетических уровнях для указанных соединений и для InSe, которые имеют аналогичную кристаллическую структуру.
    Notes: Summary The thermoreflectance spectra between 3 and 9 eV have been measured for a series of GaSxSe1−x mixed crystals. The samples were single-crystal platelets grown from the vapour by the chemical-transport method. The measurements were performed with a nonpolarized light beam propagating approximately along the anisotropy crystal axis and the temperature was modulated around 65 K. Many structures in the reflectance spectra have been analysed in their dependence on the sulphur concentration in the mixed crystals. On this basis a detailed discussion of the optical spectra in GaS and in GaSe beyond the fundamental edge is given, and new information concerning the electronic energy levels is obtained both for these compounds and for InSe, which has an analogous crystal structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02451067
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  • 4
    Electronic Resource
    Electronic Resource
    Convergent-beam electron diffraction analysis of GaSe crystals grown from the melt by different doping elements (1991)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 13 (1991), S. 233-245 
    Details
    ISSN: 0392-6737
    Keywords: Specific structure of inorganic compounds
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary A systematic investigation of the structural modifications of GaSe crystals, grown from the melt by different doping elements, has been performed by convergent-beam electron diffraction technique, in order to analyse the dependence of the structure on the doping atoms. Iodine-doped crystals have shown the ɛ-2H hexagonal and γ-3R rhombohedral polytypes. The structure of crystals doped either by silver, or copper, or cadmium, or zinc, or arsenic has been proved a mixture of the ɛ-2H hexagonal and of γ, 9 R, 12 R, 15 R rhombohedral phases. Ingots doped either by zinc or arsenic have shown the ɛ polytype prevailing in some zones and the γ structure in the other ones. The ɛ modification is dominant in ingots doped by the remaining atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02463999
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  • 5
    Electronic Resource
    Electronic Resource
    Convergent-beam electron diffraction study of melt-and vapour-grown single crystals of gallium chalcogenides (1989)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 11 (1989), S. 1145-1163 
    Details
    ISSN: 0392-6737
    Keywords: Electron determination of structures
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto È stato effettuato uno studio dettagliato delle modificazioni strutturali presenti in monocristalli di GaS e GaSe, utilizzando la tecnica della diffrazione elettronica a fasci convergenti. Sono stati analizzati cristalli cresciuti sia dal fuso con il metodo Bridgman-Stockbarger, sia da fase vapore per trasporto chimico assistito da iodio. I risultati delle osservazioni hanno mostrato che la struttura del GaSe dipende fortemente dal metodo di crescita, mentre questo non si verifica per il GaS. Infatti, i cristalli cresciuti dal fuso, sia di GaS che di GaSe, sono costituiti solo dal politipo esagonale β con gruppo spazialeP63/mmc, la cui presenza è stata confermata dall'osservazione del centro di simmetria caratteristico di tale struttura. I cristalli di GaS cresciuti da fase vapore sono costituiti dal politipo esagonale β, mentre queli di GaSe sono costituiti dalla sovrapposizione del politipo esagonale ε, avente gruppo spaziale $$P\bar 62m$$ , e dal politipo romboedrico γ con gruppo spazialeR3m.
    Abstract: Резюме Проводится подробное исследовние структурных изменений в кристаллах GaS и GaSe, используя метод дифракции сходящегося электронного пучка. Проведен анализ некоторых монокристаллов, выращенных из расплава, с номощью метода Бридгмана-Стокбаргера, из паровой фазы и с помощью химического метода переноса. Результаты наблпюдений с помощью электронной микрокопии показывают, что структура GaSe сильно зависит от метода выращивания. В кристаллах, выращенных из расплава, наблюдается только гексагональная β структура для GaS и для GaSe. Кристаллы, выращенные из паровой фазы, обнаруживают β структуру для GaS и суперпозицию гексагонального ε политипа и ромбоэдрического γ политипа для образцов GaSe. Для всех рассмотренных кристаллов проведена аккуратная оценка параметров решетки.
    Notes: Summary A detailed study of the structural modifications present in GaS and GaSe crystals has been performed by means of the convergent-beam electron diffraction technique. Several single crystals have been analysed, as grown both from the melt, by the Bridgmann-Stockbarger method, and from the vapour, by the iodine-assisted chemical transport method. The results of the electron microscopy observation show the structure of GaSe to be strongly dependent on the growth method. In the melt-grown crystals only the hexagonal β structure (space groupP63/mmc) has been observed for both GaS and GaSe. It has been confirmed by the related symmetry centre, evidenced in particular low symmetry orientation of the samples. The vapour-grown crystals show the same β structure for GaS and the superposition of the hexagonal ε polytype (space group $$P\bar 62m$$ ) and the rhombohedral γ polytype (space groupR3m) for GaSe samples. An accurate evaluation of the lattice parameters has been performed for all the analysed crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02459022
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  • 6
    Electronic Resource
    Electronic Resource
    Electron diffraction study of melt-grown InSe crystals (1986)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 7 (1986), S. 795-806 
    Details
    ISSN: 0392-6737
    Keywords: Electron determination of structures
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto È stata effettuata la diffrazione elettronica su cristalli di seleniuro di indio, clivati da lingotti cresciuti col metodo di Bridgman-Stoekbarger parterdo dagli elementi puri, presi sia in rapporto stechiometrico che in rapporti diversi. L’analisi delle figure di diffrazione ottenute in area selezionata ha permesso d’individuare la presenza di due politipi, i cui parametri reticolari sono stati calcolati. L’impilamento dei due politipi è stato osservato mediante le frange moiré.
    Abstract: Резюме Исследуется дифракция электронов на тонких кристалах InSe, выращенных из стехиометрического и нестехионетрического расплавов, с помощью метода Бридгмана-Стокбаргера. Анализ дифракдионных картин обнаруживаеет наличне двух фаз, для которых вычисляются параметры решетки. С помощью наблюдения муаровых полос исследуется поспедовательность группирования политипов.
    Notes: Summary Electron diffraction has been performed on thin crystals of indium selenide, cleaved from ingots grown from stoichiometric and nonstoichiometric melt by the Bridgman-Stockbarger method. The analysis of the selected area diffraction patterns has shown the presence of two phases, whose lattice parameters have been calculated. The stacking sequence of the polytypes has been observed through the moiré patterns.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02453439
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  • 7
    Electronic Resource
    Electronic Resource
    Optical and electrical properties of GaS x Se1−x Solid solutions (1983)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 1775-1781 
    Details
    ISSN: 0392-6737
    Keywords: Methods of crystal growth and purification
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Cristalli di GaS x Se1−x sono stati cresciuti dalla fase vapore, mediante trasporto chimico, usando I2 come agente trasportatore. Per l'intera serie di soluzioni solide, sono state eseguite misure di resistività, mobilità Hall e concentrazione dei portatori di carica a temperatura ambiente. Il comportamento di queste grandezze in funzione del parametrox è stato correlato alla dipendenza dallo stesso parametro delle costanti reticolari e della banda proibita di energia. L'analisi dei dati riportati mostra che le proprietà elettriche dipendono sia dalle caratteristiche strutturali dei cristalli, sia dalla incorporazione d'impurezze di iodio durante la crescita.
    Abstract: Резюме Выращиваются твердые растворы GaS x Se1−x из пара, используя метод переноса иода, причем содержане серыx изменяется скачками 0.1. Для полученных твердых растворов измеряются сопротивление, подвижности Холла и концентрации носителей, используя метод Ван дер Пау. Поведение этих величин в зависимости отx связано с зависимостью параметров решетки и ширины запрещенной зоны от химического состава, как было определено различными методами. Анализ полученных данных указывает, что электрические свойства твердых растворов GaS x Se1−x , выращенных из пара с иодом, определяются структурными характеристиками кристаллов, а также включением I2 во время выращивания.
    Notes: Summary GaS x Se1−x solid solutions are grown from the vapour by means of the I2-assisted transport method, varying the sulphur percentagex in steps of 0.1. Resistivity, Hall mobilities and carrier concentrations are measured at room temperature in the complete series of solid solutions by using the Van der Pauw method. Their behaviour as a function ofx is correlated to the dependence of the lattice parameters and of the energy gap on the chemical composition, as determined by various techniques. The analysis of the data reported here indicates that the electrical properties of GaS x Se1−x solid solutions grown from the vapour with iodine are determined both by the structural characteristics of the crystals and by the I2 incorporation during the growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457865
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  • 8
    Electronic Resource
    Electronic Resource
    Electron-phonon scattering in transport properties of InSe single crystals (1985)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 6 (1985), S. 383-392 
    Details
    ISSN: 0392-6737
    Keywords: Theory of electronic transport ; scattering mechanisms
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto In questo lavoro è riportato uno studio dell'interazione elettrone-fonone in monocristalli di seleniuro di indio, condotto mediante misure di effetto Hall e spettroscopia Raman. I dati sperimentali sono stati interpretati secondo il modello di Fivaz e Schmid, per lo scattering da fononi ottici omopolari. L'approssimazione migliore delle curve sperimentali è ottenuta assumendo un carattere bidimensionale per l'interazione tra gli elettroni ed i fononi, nel modoA 1, con energia 14.5 meV. Il carattere bidimensionale delle proprietà di trasporto è probabilmente dovuto alla presenza di difetti planari che localizzano i portatori di carica all'interno degli strati.
    Abstract: Резюме Исследуется электрон-фононное рассеяние в монокристаллах InSe, используя измерения подвижности Холла и спектроскопии комбинационного рассеяния. Экспериментальые данные интерпретируются в соответствии с моделью Фиваца и Шмидта для гомополярного оптического рассеяния. Наилучшая подгонка экспериментальных результав получается в предположении двумерного характера взаимодействия между электронами и фононами, модыA 1 , с энергией 14.5 мэВ. Двумерный характер, по-видимому, обусуовлен наличием большого числа плоских дефектов, которые сильно локализуют носители внутри слоев, что подтверждается наблюдениями электронной микроскопии.
    Notes: Summary The electron-phonon scattering in indium selenide single crystals has been investigated by Hall-mobility and Raman-spectroscopy measurements. The experimental data have been interpreted according to the Fivaz and Schmid model for homopolar optical scattering. The best fit of the experimental results is obtained by assuming the bidimensional behaviour of the interaction involving anA 1 phonon with energy 14.5 meV. The bidimensional character is probably due to the presence of a large number of planar defects, confirmed by electron microscope observations, which strongly localize the carriers within the layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02451897
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  • 9
    Electronic Resource
    Electronic Resource
    Angular distribution of photoelectrons from two-photon ionization in molecules: H2O (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 2883-2890 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The angular distribution of the photoejected electrons in a nonresonant two-photon ionization process in H2O is obtained by ab initio calculations for selected choices of photon polarization and experimental set-up. Within the framework of the second-order perturbation theory in the dipole and vertical transition approximations, both intermediate and final states are described in the static-exchange approximation. The continuum orbitals are obtained via a K-matrix technique, by adopting a large basis set of L2 integrable functions and an interpolation procedure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.457935
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  • 10
    Electronic Resource
    Electronic Resource
    Two-photon ionization cross section calculation for H2O (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 7301-7306 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The two-photon first ionization cross section was computed for H2O in the vertical transition approximation. A Stieltjes imaging technique was used to obtain from the results of a L2 basis set calculation, the two-photon oscillator strength density in the continuum. The calculations were performed in the independent particle static-exchange approximation for the final states. The ground-intermediate state transition matrix elements and excitation energies were computed by adopting the single channel static-exchange approximation or the multichannel random phase approximation; in the last case the intermediate-final state transition matrix elements were obtained by the equation of motion method. The calculated cross sections refer to the case of single beam of linearly or circularly polarized photons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.455311
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