ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The ability to set and accurately control the desired growth conditions is crucial in orderto attain high quality bulk growth of Silicon Carbide (SiC), especially when the ingot size is large(〉 2” in diameter by 〉 2” long). However, these two aspects of SiC PVT (Physical VaporTransport) growth technology are severely limited in “conventional” SiC PVT growth reactors withsingle cylindrical heaters. To overcome such shortcomings, an “alternative” furnace design withtwo plane resistive heaters is proposed. In order to verify benefits of this design, numericalmodeling and comparative procedures have been employed. Detailed comparative analysis revealedtwo fundamental disadvantages of the conventional furnace design, attributed to (a) – significantlyhigher in magnitude and spatially nonuniform distribution of the thermal stress that consequentlydeteriorates structural quality of the growing SiC boule, and (b) – inability to grow long (〉 2”)monocrystalline ingots of SiC. Furthermore, the potential of the alternative furnace design toovercome fundamental limitations of the conventional design is also analyzed, with particularattention being paid to the processes of source material recrystallization
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.15.pdf
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