ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Ion-implantation is a widely used doping technique in II–VI semiconductors. Nevertheless, ion-implantation damage has to be better understood to properly control this process. In order to investigate the implantation-induced defects in such compounds, room-temperature implantations of 320 keV Al ions have been performed on crystalline samples of [111] Hg1−xCdxTe (x(approximate)20%) for doses ranging from 1013 to 1015 cm−2. We report the first measurements of x-ray diffuse scattering close to different Bragg reflections on such as-implanted samples. The evolution of the diffuse intensity as a function of the dose has been observed. The defect-induced diffuse intensity arises mainly from interstitial dislocation loops. Nevertheless, vacancy loops are observed above 3×1014 Al/cm2. The mean radius of the dislocation loops increases in size by three to four times when the dose rises from 1013 to 1015 cm−2. Finally, the saturation of point defects has been observed independently of their clustering at about 5×1013 Al/cm2, that is in the same range as the saturation dose of the sheet electron concentration. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.365588
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