ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Silicon nitride samples were formed by pressureless sintering process, using neodymium oxide assintering aid. The short term compressive creep behavior was evaluated over a stress range of 50-300 MPaand temperature range 1200-1350 0C. Post sintering heat treatments in nitrogen with a stepwise decrementalvariation of temperature were performed in some samples and microstructural analysis by X-raydiffractometry and Transmission Electron Microscopy showed that the secondary crystalline phases whichform from the remnant glass is dependent upon heat treatment. For the non heat treated samples, glassyregions were revealed, by centered dark field images, using diffuse scattered electrons, to be located at threeand four point grain junctions. No direct evidence of microstructural changes involving dislocationgeneration or motion was detected in the stress and temperature range studied. Stress exponents near unity,related to grain boundary accommodation processes were obtained for low temperatures and for heat treatedsamples. The behaviors for the heat treated samples were correlated in terms of depletion of metallic rareearthions and impurities from grain boundaries and triple junctions, with subsequent crystallization of theprimary glass. The non heat treated samples showed higher creep rates at higher stresses and temperatures.The deformation processes in these cases were correlated to stress concentrations at grain boundary andtriple point junctions, caused by grains rotation and sliding, accommodated by cavitation
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/19/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.591-593.560.pdf
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