ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A detector stage comprising a photodiode, a field-effect transistor, and a load resistor, and a wavelength demultiplexer have been monolithically integrated in the GaInAsP/InP material system. Chips were mounted into complete modules and operated in a 1.3 μm/1.55 μm bidirectional transmission link. At 576 Mbit/s and 10−9 bit error rate the sensitivity of the module was −21 dBm, while the intrinsic sensitivity of the receiver was determined to be −28 dBm.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107460
Permalink