Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
60 (1992), S. 1715-1716
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Tunneling spectra have been measured at various locations on uniformly doped, ion-implanted, and epitaxial silicon samples. We find that the I-V characteristics consistently vary with the variation of doping concentrations. Significant differences in the I-V curves are observed between n- and p-type samples. Combined with the high resolution of scanning tunneling microscopes (STM), this principle can be used to obtain two-dimensional doping profiles in submicron VLSI circuits.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107195
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