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  • 1
    Electronic Resource
    Electronic Resource
    Direct measurement of strain effects on magnetic and electrical properties of epitaxial SrRuO3 thin films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 978-980 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By lifting an epitaxial thin film off its growth substrate, we directly and quantitatively demonstrate how elastic strain can alter the magnetic and electrical properties of single-domain epitaxial SrRuO3 thin films (1000 Å thick) on vicinal (001) SrTiO3 substrates. Free-standing films were then obtained by selective chemical etching of the SrTiO3. X-ray diffraction analysis shows that the free-standing films are strain free, whereas the original as-grown films on SrTiO3 substrates are strained due to the lattice mismatch at the growth interface. Relaxation of the lattice strain resulted in a 10 K increase in the Curie temperature to 160 K, and a 20% increase in the saturation magnetic moment to 1.45 μB/Ru atom. Both values for the free-standing films are the same as that of the bulk single crystals. Our results provide direct evidence of the crucial role of the strain effect in determining the properties of the technologically important perovskite epitaxial thin films. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120603
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  • 2
    Electronic Resource
    Electronic Resource
    Three-dimensional strain states and crystallographic domain structures of epitaxial colossal magnetoresistive La0.8Ca0.2MnO3 thin films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3294-3296 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of three-dimensional strain states and crystallographic domain structures of epitaxial colossal magnetoresistive La0.8Ca0.2MnO3 films have been studied as a function of film thickness and lattice mismatch with two types of (001) substrates, SrTiO3 and LaAlO3. In-plane and out-of-plane lattice parameters and strain states of the films were measured directly using normal and grazing incidence x-ray diffraction techniques. The unit cell volume of the films is not conserved, and it exhibits a substrate-dependent variation with film thickness. Films grown on SrTiO3 substrates with thickness up to ∼250 Å are strained coherently with a pure (001)T orientation normal to the surface. In contrast, films as thin as 100 Å grown on LaAlO3 show partial relaxation with a (110)T texture. While thinner films have smoother surfaces and higher crystalline quality, strain relaxation in thicker films leads to mixed (001)T and (110)T textures, mosaic spread, and surface roughening. The magnetic and electrical transport properties, particularly Curie and peak resistivity temperatures, also show systematic variations with respect to film thickness. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122749
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of film thickness and lattice mismatch on strain states and magnetic properties of La0.8Ca0.2MnO3 thin films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4794-4796 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of strain relaxation on the crystallographic domain structure and on the magnetic and transport properties of epitaxial colossal magnetoresistive La0.8Ca0.2MnO3 (LCMO) thin films have been studied. LCMO films in the thickness range of 100–4000 Å were grown on (001) SrTiO3 and (001) LaAlO3 substrates, which impose an in-plane tensile and an in-plane compressive biaxial stress in the films, respectively. On (001) SrTiO3 substrates, the films can be grown coherently up to a thickness ∼250 Å, then strain relaxation occurs at a thickness of ∼500 Å. In contrast, even the 100 Å film grown on (001) LaAlO3 is partially relaxed, and the critical thickness for complete strain relaxation is ∼750 Å. The very thin films (〈250 Å) show a pure (001)T normal orientation for growth on SrTiO3 and a pure (110)T texture for growth on LaAlO3. As thickness increases, the lattice strain relaxes, resulting in mixed (001)T and (110)T textures for growth on both substrates. Both the Curie and peak resistivity temperatures increase with increasing film thickness, but they do not exhibit a correlation to strain states of the film. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370484
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  • 4
    Electronic Resource
    Electronic Resource
    Lattice distortion and uniaxial magnetic anisotropy in single domain epitaxial (110) films of SrRuO3 (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5297-5299 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single domain epitaxial (110) films of SrRuO3 exhibit uniaxial magnetic anisotropy instead of the biaxial anisotropy observed in the bulk material. The magnetic easy axis for the film is along the orthorhombic [010] direction below TC, and it rotates toward the [110] perpendicular direction as temperature decreases. The [100] direction, which is also magnetically "easy" in the bulk, becomes "hard" in the film. X-ray diffraction experiments show that this unique transformation of magnetic anisotropy is related to a distortion from the bulk orthorhombic lattice into a triclinic structure in the epitaxial film, such that the lattice along the [010] direction expands while its [100] counterpart contracts. The distortion appears to arise from rotation and tilt of RuO6 octahedra. The finding indicates that the magnetic anisotropy in epitaxial SrRuO3 films is rooted in the crystalline anisotropy influenced by strong spin–orbit interactions. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369859
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of three-dimensional strain states on magnetic anisotropy of La0.8Ca0.2MnO3 epitaxial thin films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1615-1617 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic anisotropy of La0.8Ca0.2MnO3 (LCMO) epitaxial thin films grown on (001) SrTiO3 and LaAlO3 a substrates exhibits strong correlation with substrate-induced strain states as determined by normal and grazing incidence x-ray diffraction. In a 250 Å thick LCMO (001)T film grown on SrTiO3 substrate, an in-plane biaxial magnetic anisotropy is observed, and it is accompanied by a substrate-induced in-plane biaxial tensile strain. In contrast, the observed magnetic easy axis for a 250 Å (110)T film grown on LaAlO3 substrate is perpendicular to the film plane, and the corresponding in-plane strain is biaxial compressive. In both cases the magnetic easy axes are along the crystallographic directions under tensile strain, indicating the presence of a positive magnetostriction. In thicker films (∼4000 Å) grown on both substrates that are nearly strain relaxed, the magnetic easy axis lies in the film plane along the [110] direction of the (001) substrate. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123634
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  • 6
    Electronic Resource
    Electronic Resource
    Control of the growth and domain structure of epitaxial SrRuO3 thin films by vicinal (001) SrTiO3 substrates (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1962-1964 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the effect of both miscut angle (α) and miscut direction (β) of vicinal substrates on the epitaxial growth and domain structure of isotropic metallic oxide SrRuO3 thin films. The thin films have been grown on vicinal (001) SrTiO3 substrates with α up to 4.1° and β up to 37° away from the in-plane [010] axis. Single-crystal epitaxial (110)o SrRuO3 thin films were obtained on vicinal SrTiO3 substrates with a large miscut angle (α=1.9°, 2.1°, and 4.1°) and miscut direction close to the [010] axis. Decreasing the substrate miscut angle or aligning the miscut direction close to the [110] axis (β=45°) resulted in an increase of 90° domains in the plane. The films grown on vicinal substrates displayed a significant improvement in crystalline quality and in-plane epitaxial alignment as compared to the films grown on exact (001) SrTiO3 substrates. Atomic force microscopy revealed that the growth mechanism changed from two-dimensional nucleation to step flow growth as the miscut angle increased. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118792
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  • 7
    Electronic Resource
    Electronic Resource
    Anisotropic magnetotransport properties of epitaxial thin films of conductive ferromagnetic oxide SrRuO3 : The 7th joint MMM-intermag conference on magnetism and magnetic materials (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 6995-6997 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the crystallographic domain structure dependent anisotropy in the magnetotransport properties of epitaxial thin films of the conductive ferromagnetic oxide SrRuO3. Single domain SrRuO3 thin films on miscut (001) SrTiO3 substrates exhibit a strong anisotropy in magnetization and magnetoresistance that reflects the inherent magnetocrystalline anisotropy of the material. In contrast, the SrRuO3 thin film on (001) LaAlO3 substrate shows identical magnetization and magnetotransport properties in two orthogonal directions on the film due to the presence of 90° domains in the plane. For both films, large negative magnetoresistance effects (∼10%) are observed when the applied magnetic field is parallel to the current due to the suppression of spin fluctuations near Tc and the anisotropic magnetoresistance effect at low temperatures. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367674
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  • 8
    Electronic Resource
    Electronic Resource
    Growth and characterization of epitaxial thin films of conductive ferromagnetic oxide SrRuO3 : The 7th joint MMM-intermag conference on magnetism and magnetic materials (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 6539-6541 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown epitaxial thin films of the conductive ferromagnetic oxide SrRuO3 on vicinal (001) SrTiO3 substrates with different miscut angles and miscut direction. Scanning tunneling microscopy and x-ray diffraction studies indicate that when the miscut angle of the substrate is small (α≤1°), the films grow by a combination of two-dimensional nucleation and step flow leading to a two domain in-plane texture. As the miscut angle of the substrate is increased, complete step flow growth occurs resulting in single domain thin films if the miscut direction is close to the [010] direction. When the miscut direction of the substrate is changed towards the in-plane [110] direction, two directional step flow growth occurs leading to two domain texture with both domains being present in equal volume fraction. Such differences in the growth mechanism and domain structure of the films lead to significant differences in their magnetization and magnetotransport behavior. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367669
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  • 9
    Electronic Resource
    Electronic Resource
    Growth mechanisms of epitaxial metallic oxide SrRuO3 thin films studied by scanning tunneling microscopy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1171-1173 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the deliberately controlled growth of epitaxial metallic oxide SrRuO3 thin films in three distinctly different growth modes. Scanning tunneling microscopy and x-ray diffraction indicate that the growth mechanism for films on exact (001) SrTiO3 substrates is two-dimensional nucleation, which results in a two domain in-plane structure. As the miscut angle of vicinal (001) SrTiO3 substrates is increased, the growth mechanism changes to step flow which leads to single domain thin films. Films on (001) LaAlO3 substrates have an incoherent three-dimensional island growth due to the large lattice mismatch, resulting in a bulk-like lattice. The vast difference in the growth mechanisms of these films leads to a corresponding difference in their electrical transport and magnetic behavior. Such nanoscale control of growth mechanism, surface morphology, and domain structure can be very important in the fabrication of novel perovskite oxide devices. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119616
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  • 10
    Electronic Resource
    Electronic Resource
    Magnetoresistance of epitaxial thin films of ferromagnetic metallic oxide SrRuO3 with different domain structures (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1724-1726 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the magnetoresistive behavior of epitaxial thin films of the conductive ferromagnetic oxide SrRuO3 with different domain structures grown on both miscut (001) SrTiO3 and exact (001) LaAlO3 substrates. A strong anisotropic magnetoresistance (MR) has been observed in the single domain SrRuO3 thin film on miscut (001) SrTiO3 substrate. In contrast, the SrRuO3 thin film on (001) LaAlO3 substrate shows identical MR behavior in two orthogonal directions on the film due to the presence of 90° domains in the plane. For both the films, large negative magnetoresistance effects (∼10%) were observed when the current and the applied magnetic field are parallel. This is attributed to a reduction in spin fluctuations near Tc and to magnetization rotation leading to a change in the angle between the current and magnetization at low temperatures. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120016
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