Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
71 (1997), S. 2984-2986
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The choice of germanium as a substrate for CdTe and HgCdTe (MCT) epitaxial films is discussed. Ge appears to be a good candidate to solve the weakness of CdTe homosubstrates. Direct growth of CdTe(331) B 4° off epitaxial films was achieved on a Ge (001) substrate tilted 8° around [11¯0] by molecular beam epitaxy (MBE). Hence MCT(331) 4° off MBE epilayers were grown and characterized. The surface morphology was smooth and mirrorlike. X-ray double-crystal rocking curve on (331) planes showed full-width at half-maximum of 130 arc sec. Transmission electron microscopy is also reported to show the misfit accommodation at the CdTe/Ge interface; two domains were observed close to the interface but only a (331) orientation remained after a 50-nm-thick growth. The first photodiodes on MCT on Ge were fabricated and exhibited high performances: for a cutoff wavelength value of 5.24 μm at T=77 K, the shunt impedance measured was 6.6×109 Ω and the R0A product was 1.8×105 Ω cm2. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.120237
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