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  • 1
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    Single-domain epitaxial silicene on diboride thin films (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-04-13
    Description: Epitaxial silicene, which forms spontaneously on ZrB 2 (0001) thin films grown on Si(111) wafers, has a periodic stripe domain structure. By adsorbing additional Si atoms on this surface, we find that the domain boundaries vanish, and a single-domain silicene sheet can be prepared without altering its buckled honeycomb structure. The amount of Si required to induce this change suggests that the domain boundaries are made of a local distortion of the silicene honeycomb lattice. The realization of a single domain sheet with structural and electronic properties close to those of the original striped state demonstrates the high structural flexibility of silicene.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 2
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    Intrinsic Instability of Aberration-Corrected Electron Microscopes (2012)
    American Physical Society (APS)
    Details
    Publication Date: 2012-10-16
    Description: Author(s): S. M. Schramm, S. J. van der Molen, and R. M. Tromp Aberration-corrected microscopes with subatomic resolution will impact broad areas of science and technology. However, the experimentally observed lifetime of the corrected state is just a few minutes. Here we show that the corrected state is intrinsically unstable; the higher its quality, the more ... [Phys. Rev. Lett. 109, 163901] Published Mon Oct 15, 2012
    Keywords: Nonlinear Dynamics, Fluid Dynamics, Classical Optics, etc.
    Print ISSN: 0031-9007
    Electronic ISSN: 1079-7114
    Topics: Physics
    Published by American Physical Society (APS)
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  • 3
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    Titration of submonolayer Au growth on Si(111) (2014)
    American Physical Society (APS)
    Details
    Publication Date: 2014-01-15
    Description: Author(s): J. Kautz, M. W. Copel, M. S. Gordon, R. M. Tromp, and S. J. van der Molen We study and analyze the growth of submonolayers of Au on Si(111) by a complementary set of surface techniques. Specifically, we focus on the 5×2 and the α3×3 structures. We determine the gold coverage of these structures as a function of temperature by means of low energy electron diffraction (LEED... [Phys. Rev. B 89, 035416] Published Tue Jan 14, 2014
    Keywords: Surface physics, nanoscale physics, low-dimensional systems
    Print ISSN: 1098-0121
    Electronic ISSN: 1095-3795
    Topics: Physics
    Published by American Physical Society (APS)
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  • 4
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    Direct Measurement of the Growth Mode of Graphene on SiC(0001) and SiC(0001[over ¯]) (2011)
    American Physical Society (APS)
    Details
    Publication Date: 2011-10-12
    Description: Author(s): J. B. Hannon, M. Copel, and R. M. Tromp [Phys. Rev. Lett. 107, 166101] Published Tue Oct 11, 2011
    Keywords: Condensed Matter: Structure, etc.
    Print ISSN: 0031-9007
    Electronic ISSN: 1079-7114
    Topics: Physics
    Published by American Physical Society (APS)
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  • 5
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    Surface stress and thermodynamic nanoscale size selection (2002)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 2002-01-12
    Description: Using the Si(111) surface as an example, we show how temperature can be used to tune the size of domains during a surface phase transition. From analysis of the measured stable domain sizes, we determine key material parameters and clarify the close relationship between nucleation and thermodynamic size selection. More generally, the model we developed describes nanoscale self-assembly processes in contact with a reservoir (for example, liquid- or vapor-phase epitaxy).〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Hannon, J B -- Tersoff, J -- Tromp, R M -- New York, N.Y. -- Science. 2002 Jan 11;295(5553):299-301.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉IBM Research Division, T. J. Watson Research Center, Post Office Box 218, Yorktown Heights, NY 10598, USA. jbhannon@us.ibm.com〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/11786636" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 6
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    Transition States Between Pyramids and Domes During Ge/Si Island Growth (1999)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1999-12-03
    Description: Real-time observations were made of the shape change from pyramids to domes during the growth of germanium-silicon islands on silicon (001). Small islands are pyramidal in shape, whereas larger islands are dome-shaped. During growth, the transition from pyramids to domes occurs through a series of asymmetric transition states with increasing numbers of highly inclined facets. Postgrowth annealing of pyramids results in a similar shape change process. The transition shapes are temperature dependent and transform reversibly to the final dome shape during cooling. These results are consistent with an anomalous coarsening model for island growth.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Ross -- Tromp -- Reuter -- New York, N.Y. -- Science. 1999 Dec 3;286(5446):1931-1934.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉IBM T. J. Watson Research Center, Post Office Box 218, Yorktown Heights, NY 10598, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/10583951" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 7
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    Quantum States and atomic structure of silicon surfaces (1986)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1986-10-17
    Description: The electronic and geometric structures of surfaces are closely related to each other. Conventional surface science techniques can study one or the other, but not both at the same time. Recent developments in scanning tunneling microscopy have made it possible to study simultaneously the electronic and geometric structure of Si(111) and Si(001) surfaces. Surface states can be atomically resolved in space and energy; thus the electronic structure of single atoms on surfaces can be studied in detail. The various surface states observed on silicon surfaces are found to derive from different atomic-scale features in the surface geometric structure. Scanning tunneling microscopy has now bridged the gap between electronic and geometric structure, providing a unique opportunity to obtain a better understanding of many surface processes at the atomic level.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Tromp, R M -- Hamers, R J -- Demuth, J E -- New York, N.Y. -- Science. 1986 Oct 17;234(4774):304-9.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/17834527" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 8
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    Charge Catastrophe and Dielectric Breakdown During Exposure of Organic Thin Films to Low-Energy Electron Radiation (2017)
    American Physical Society (APS)
    Details
    Publication Date: 2017-12-29
    Description: Author(s): A. Thete, D. Geelen, S. J. van der Molen, and R. M. Tromp The effects of exposure to ionizing radiation are central in many areas of science and technology, including medicine and biology. Absorption of UV and soft-x-ray photons releases photoelectrons, followed by a cascade of lower energy secondary electrons with energies down to 0 eV. While these low en... [Phys. Rev. Lett. 119, 266803] Published Thu Dec 28, 2017
    Keywords: Condensed Matter: Electronic Properties, etc.
    Print ISSN: 0031-9007
    Electronic ISSN: 1079-7114
    Topics: Physics
    Published by American Physical Society (APS)
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  • 9
    Electronic Resource
    Electronic Resource
    Imaging pattern formation: Bridging the pressure gap (1995)
    Springer
    Applied physics 61 (1995), S. 569-574 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 82.65. Tv; 82.40.Ck
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  Two surface-sensitive optical imaging methods, Ellipso-Microscopy for Surface Imaging (EMSI) and Reflection Anisotropy Microscopy (RAM) are introduced. They allow imaging of pattern formation on surfaces, e.g., due to submonolayer coverages of adsorbates, at any arbitrary pressure. In spatio-temporal pattern formation during heterogeneously catalysed reactions this bridges the ‘pressure gap’ between well-defined UHV experiments and ‘real catalysis’. For the CO oxidation on Pt(110), the parameter space for pattern formation was extended up to 100 mbar, i.e., by 5 orders of magnitude compared to earlier investigations by Photo-Emission Electron Microscopy (PEEM) which had to be conducted below 10-3 mbar. With increasing pressure, the synchronisation mechanisms responsible for the observed pattern showed a gradual shift from reaction-diffusion to thermal-kinetic coupling unveiling previously unseen features of pattern formation in catalysis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01542865
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  • 10
    Electronic Resource
    Electronic Resource
    Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 219-221 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of growth temperature on the interfacial abruptness of strained Ge layers, a few monolayers thick, embedded in Si has been studied using Raman spectroscopy to identify the presence of GeGe and GeSi bonds and medium energy ion scattering to characterize the spatial extent of the layers. Atomically sharp interfaces are observed for growth temperatures just above the crystalline to amorphous transition range, with pseudomorphic growth found for growth temperatures 〉∼250 °C. Asymmetric mixing of Ge into the Si capping layer occurs during growth at higher temperatures. Significantly less intermixing occurs on annealing after growth, pointing to the role of dynamical processes occurring at the growth front.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101014
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