ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
An infrared photoconductor fabricated with a HgTe/CdTe superlattice grown on a GaAs substrate by molecular beam epitaxy is described here for the first time. The growth procedure, device fabrication, and measurement results are described. The results show that the device has relatively high uniformity and 1000 K black-body detectivity 2.4×109 cm Hz1/2 W−1. The photoconductivity decay method was used for determining carrier lifetime of the HgTe/CdTe superlattice, the measured lifetime is 12 μs at 77 K, which is the longest lifetime ever reported for HgTe/CdTe superlattices and we believe that the increase of lifetime is mainly due to the reduction of dimensions.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.108766
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