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  • 1
    Electronic Resource
    Electronic Resource
    Low-temperature photoluminescence studies of chemical-vapor-deposition-grown 3C-SiC on Si (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3163-3175 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 26 cubic SiC (3C-Sic) films grown on (100) Si by way of chemical vapor deposition (CVD) with SiC film thicknesses ranging from 600 A(ring) to 25 μm have been studied by photoluminescence at 2 K. The "defect-related'' W band near 2.15 eV appears in very thin-film samples. The G band near 1.90–1.92 eV and its phonon side bands G1 and G2 are believed to be related to dislocations and extended defects. The ratio ρ of the intensities of the G band and the strongest nitrogen-bound exciton (N-BE) TO(X) line may be used as a figure of merit for crystalline perfection in CVD 3C-SiC films. General formulas for the band-gap shift due to an axial stress, including three special cases—hydrostatic pressure and uniaxial and biaxial stress—are derived and applied to the CVD 3C-SiC/Si system. An experimental relationship of stress in these epitaxial films of 3C-SiC as a function of depth is obtained. It is shown that a 1–3 μm transition layer greatly reduces the interface misfit strain. For films thicker than 3 μm the film stress decreases slightly with increase of film thickness. The effects of biaxial stress on the relative intensities of N-BE lines are experimentally studied. It is reported that biaxial stress in the SiC/Si system depresses the intensity of the no-phonon line as well as the TA, LA, and LO phonon transitions of the N-BE spectrum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341532
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  • 2
    Electronic Resource
    Electronic Resource
    Raman scattering studies of chemical-vapor-deposited cubic SiC films of (100) Si (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3176-3186 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman backscattering studies for a series of cubic SiC (3C-SiC) single-crystal films grown on (100)Si by way of chemical vapor deposition (CVD) with SiC film thicknesses dSiC from 600 A(ring) to 17 μm are performed. Raman spectra of samples with dSiC〉4 μm show a sharp and strong feature which obeys the selection rule for the 3C-SiC LO(Γ) phonon line. The Raman signals from the SiC film and the Si substrate show the same polarization behavior which confirms that the crystalline orientations of the Si substrate and 3C-SiC film are the same. Although there is a big lattice mismatch of 20% between 3C-SiC and Si the observed Raman shifts between 3C-SiC/Si and free 3C-SiC films are ≤2 cm−1 and reflect strains of 0.1%–0.2% in films thicker than 4 μm. Some interesting enhancements of Si and 3C-SiC Raman signals are reported. The Si 522 cm−1 phonon from a Si wafer is enhanced in intensity by a factor of 2–3 due to a CVD overlayer of cubic SiC. Furthermore, the 3C-SiC longitudinal optical phonon at the Γ point, LO(Γ), from SiC/Si samples is enhanced by a factor of 2 or 3 following the removal of the Si substrate. The strict selection rules are no longer obeyed in this case. The former is possibly due to the electric-field-induced inelastic scattering from the SiC/Si heterojunction. The latter is explained by the multiple reflection in free 3C-SiC films. Our theoretical analysis shows that if the cross section for forward scattering is about one order of magnitude larger than that for backscattering, this enhancement will appear. The forward scattering has different selection rules from the back scattering and thus could lead to the appearance of the forbidden transverse optical phonon and the depolarization of the 3C-SiC Raman phonons from the SiC free films. The variation of the Raman spectrum with incident power has also been studied. The Raman cross section for 3C-SiC is estimated by a new method. The wavelength shifts of 3C-SiC LO(Γ) phonons taken from SiC/Si or free films are measured and explained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341533
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  • 3
    Electronic Resource
    Electronic Resource
    Evolution of Larval Food Preferences in Microlepidoptera (1980)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Entomology 25 (1980), S. 133-159 
    Details
    ISSN: 0066-4170
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Biology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.en.25.010180.001025
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  • 4
    Electronic Resource
    Electronic Resource
    Raman determination of layer stresses and strains for heterostructures and its application to the cubic SiC/Si system (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6827-6835 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A set of formulas for Raman shifts of diamond and zinc-blende semiconductors under a generalized axial stress are derived. The Raman shifts under hydrostatic pressure, uniaxial and biaxial stresses are only the special cases of the general formulas. Raman-stress coefficients and mode parameters are introduced, by which the Raman shifts due to different kinds of applied stresses are related. By the analysis of known Raman data of cubic SiC (3C-SiC) under hydrostatic pressures, one of the Raman-stress coefficients is obtained and the existing elastic stiffness constants of 3C-SiC are optimized. Unreliable data in the literature are pointed out and a choice of the best available data is made (C11=5.4, C12=1.8, and C44=2.5×1012 dyn/cm2). A series of chemical-vapor-deposited 3C-SiC films on (100) Si with the film thicknesses between 4 and 17 μm are measured by Raman scattering. We propose a method for calculating the stress and strain in these SiC films. The stresses in 3C-SiC on Si are in the range of 0.3–1.1 GPa and strains are on the order of 0.1%-0.2%, which is a factor of 100 below the lattice mismatch between bulk 3C-SiC and Si. Further discussion of the release of strain due to misfit dislocations and the effect of the buffer layer on the film stress is given. Our expressions and the method of the measurement of the stress and strain in heterostructures are quite general and may be used for other systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341997
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  • 5
    Electronic Resource
    Electronic Resource
    Optical reflectivity of 3C and 4H-SiC polytypes: Theory and experiment (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2747-2749 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental and theoretical optical reflectivity in the range 4–10 eV are reported for the 3C and 4H polytypes of SiC. The calculations used the linear muffin-tin orbital method and the local density approximation. Good agreement in peak positions and line shape is obtained except for a nearly constant shift of ∼1.00 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110322
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  • 6
    Electronic Resource
    Electronic Resource
    High-voltage 6H-SiC p-n junction diodes (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1770-1772 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A chemical vapor deposition (CVD) process has been used to produce device structures of n-and p-type 6H-SiC epitaxial layers on commercially produced single-crystal 6H-SiC wafers. Mesa-style p-n junction diodes were successfully fabricated from these device structures using reactive ion etching, oxide passivation, and electrical contact metallization techniques. When tested in air, the 6H-SiC diodes displayed excellent rectification characteristics up to the highest temperature tested, 600 °C. To observe avalanche breakdown of the p-n junction diodes, testing under a high-electrical-strength liquid was necessary. The avalanche breakdown voltage was 1000 V representing the highest reverse breakdown voltage to be reported for any CVD-grown SiC diode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106195
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  • 7
    Electronic Resource
    Electronic Resource
    Growth of improved quality 3C-SiC films on 6H-SiC substrates (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1353-1355 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Previously reported chemical vapor deposition of 3C-SiC on 6H-SiC has resulted in films with a high density of double positioning boundaries (DPBs). We have found that growth on as-grown faces of 6H-SiC crystals can yield films that are largely free of DPBs. The (111) 3C-SiC films, up to 12 μm thick, were evaluated by optical and electron microscopy and low-temperature photoluminescence (LTPL). The LTPL spectra of the films were similar to those of high quality Lely-grown 3C-SiC.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102512
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  • 8
    Electronic Resource
    Electronic Resource
    Aluminum acceptor four particle bound exciton complex in 4H, 6H, and 3C SiC (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2953-2955 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New lines in the low temperature luminescence spectra of lightly aluminum doped p-type films of 3C, 6H, and 4H SiC are identified and associated with the recombination of a neutral aluminum acceptor four particle bound exciton complex.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109627
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  • 9
    Electronic Resource
    Electronic Resource
    Atomic probe microscopy of 3C SiC films grown on 6H SiC substrates (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2545-2547 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface of 3C SiC films grown on 6H SiC substrates has been studied by atomic probe microscopy in air. Atomic-scale images of the 3C SiC surface have been obtained by scanning tunneling microscopy (STM). STM has confirmed the 〈111〉 orientation of the cubic 3C layer grown on the {0001} surface of the hexagonal 6H substrate. The nearest-neighbor atomic spacing for the 3C layer has been measured to be 3.29±0.2 A(ring), which is within 7% of the bulk value. Shallow terraces in the 3C layer have been observed by STM to separate regions of very smooth growth in the vicinity of the 3C nucleation point from considerably rougher 3C surface regions. These terraces are oriented at right angles to the growth direction. Atomic force microscopy has been used to study etch pits present on the 6H substrate due to high temperature HCl cleaning prior to chemical vapor deposition growth of the 3C layer. The etch pits have hexagonal symmetry and vary in depth from 50 nm to 1 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109291
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  • 10
    Electronic Resource
    Electronic Resource
    Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 333-335 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have found that, with proper pregrowth surface treatment, 6H-SiC single-crystal films can be grown by chemical vapor deposition (CVD) at 1450 °C on vicinal (0001) 6H-SiC with tilt angles as small as 0.1°. Previously, tilt angles of greater than 1.5° were required to achieve 6H on 6H at this growth temperature. In addition, 3C-SiC could be induced to grow within selected regions on the 6H substrate. The 3C regions contained few (or zero) double-positioning boundaries and a low density of stacking faults. A new growth model is proposed to explain the control of SiC polytype in this epitaxial film growth process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105587
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