ISSN:
0142-2421
Keywords:
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Physics
Notes:
Boron and germanium δ-doped silicon samples were studied using SIMS depth profiling on a Cameca IMS-4F instrument with O2+, N2+ and Cs+ primary beams at various energies and incidence angles. The depth resolution characteristics were compared. We show that, with experimental conditions being the same, the N2+ primary beam provides for better decay lengths, while the leading edges of the profiles turn out to be significantly broadened because of the beam-induced roughness which develops at an early stage of silicon bombardment by N2+ ions. The influence of ripple-like roughness on the SIMS profile shape is considered within the present simple analytical model. The effect of a modified layer on the SIMS profile depth was experimentally investigated. For profiles obtained with an N2+ primary beam, it was shown that swelling of the modified layer produced by the implantation and trapping of primary particles shifts the profile as a whole toward the surface.
Additional Material:
10 Ill.
Type of Medium:
Electronic Resource
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