Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
67 (1995), S. 1253-1255
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The effect of hydrogen on donors (N) and acceptors (Al, B) in 6H-SiC crystals has been evidenced by electron spin resonance and transport measurements. Typical passivation (i.e., complexing with H) levels of 75% have been obtained by annealing in a H2 atmosphere, and a corresponding decrease in free-carrier density has been observed. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.114388
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