Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
68 (1996), S. 3576-3578
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We demonstrate the performance of a semiconductor photorefractive p-i-n diode operating at 1.55 μm in the longitudinal quantum-confined Stark geometry. The device structure consists of a semi-insulating InP–GaInAs(P) multiple quantum well, sandwiched between two trapping regions, and embedded in a p-n junction. In this structure, the measured output diffraction efficiency reaches 0.6%. This value is close to the output diffraction efficiency value estimated from electroabsorption measurements. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116642
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