Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
69 (1996), S. 541-543
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The thermally oxidized vicinal Si(001)– SiO2 interface was studied by using polarized beam Fourier transform infrared spectroscopy and cross-sectional transmission electron microscopy. We observed an anisotropic absorption of the Si–O–Si stretching mode at the vicinal interface, which is explained with a proposed Si–SiO2 interface model; a single-layer/double-layer stepped structure. We also show that the interface of the Si–SiO2 formed at 1000 °C consists mostly of a double-layer stepped structure with a single domain terrace, while that formed at 850 °C has a single-layer stepped structure. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117780
Permalink
|
Location |
Call Number |
Expected |
Availability |