ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Presented in this letter are measurements of the kink effect in 0.2 μm gate length AlInAs/GaInAs/InP modulation-doped field-effect transistors. The dc kink effect, which results in a sharp increase of the dc output conductance, has been eliminated in structures grown with a low AlInAs V:III flux ratio. The kink effect is a low-frequency mechanism that is not present at microwave frequencies and is attributed to trapping phenomena in the AlInAs.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101151
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