ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Inhomogeneity of anodic oxide films of pure Al, Al-0.42 at. % Ta, Al-1.1 at. % Ta, Al-0.5 at. % Ti, and Al-1.0 wt % Si formed in various electrolyte solutions has been investigated. Scanning electron microscopy observation of their cross sections revealed their structural inhomogeneity: they consist of an inner layer element with a smooth texture and an outer layer element distinguished by its textural properties such as roughness and macroscopic voids. An imaginary part of the impedance for those oxides revealed their electrical inhomogeneity: their impedance spectra were fitted by the summation of characteristic Debye functions, PC, PV1, and PV2, in the frequency regime where direct current conduction predominated. This indicates that three differing processes of charge transport coexist. Only PC which had the shortest conductivity relaxation time was manifested for the oxide, where a smooth texture was observed. PV1 which had the second shortest relaxation time was predominantly manifested for the oxide, where a rough texture indicating the existence of minute voids was observed. PV2 which had the longest relaxation time was predominantly manifested for the oxide, where macroscopic voids were observed. Based on the close correlation between the texture and the impedance spectra, PC, PV1, and PV2 were attributed to the traps induced at the microvoids, minute voids, and macroscopic voids. The temperature dependence of the conductivities, as derived from the Debye peaks, showed that oxides had a well-defined trap level 2.0±0.2 eV below the conduction band edge. The trap density was least for the oxide with a smooth texture and it was higher by more than an order of magnitude for the oxide with a rough texture. As regards the anodization behavior, it was shown that the oxidizing reactants migrating toward the matrix metal was OH− and that the reaction to produce H2 near the oxide–matrix metal interface was suppressed by the predominant reaction to form an Si–H bond in Al–Si. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.369313
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