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  • 1
    ISSN: 1090-6487
    Keywords: 78.55.Et ; 61.72.Nn ; 71.70.Ch ; 71.70.Ej ; 71.35.Cc
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Manifestations of bulk crystalline regions with stacking faults are detected in the reflection and photoluminescence spectra of CdS1-x Sex crystals with a variety of compositions. The magnitude of the crystal-field anisotropy and the spin-orbit splitting in these crystals are estimated. It is shown that reabsorption affects the form of the photoluminescence in crystals with stacking faults.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 1499-1504 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A modified broad beam ion source for low-energy hydrogen ion implantation of semiconductors is described. Based on a Kaufman type ion source two different solutions are presented: (a) an ion source with an extraction system consisting of two molybdenum grids with a low gas flow conductance reworked for hydrogen operation, and (b) a ten-grid mass separating ion beam system which enables the mass selection of H+, H2+, and H3+. The ion energy could be set in the range of 200–500 eV with a current density reaching from 1 to 100 μA/cm2. It is shown that at higher pressure the main ion created in the ion source is H3+ due to ion-molecule processes, whereas at lower pressure only H2+ and H+ are produced. Special consideration is given to the ion beam analysis of the two grid ion source operating in the 10−3 mbar range allowing to explain the different peak structures by the potential distribution across the ion source and different charge transfer processes. In addition, the analysis reveals neutral and ionized collision products in the ion beam. The ten-grid mass separating ion source could be operated in the 10−4 mbar range resulting in a nearly collision free ion beam which permits the generation of a mass separated hydrogen ion beam. © 1998 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1624-1627 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenation and oxygenation of CuInSe2 have been studied by x-ray photoelectron spectroscopy in order to investigate the defect properties. Initially oxidized p-type material was type-converted by low-energy hydrogen ion implantation. A defect model has been proposed suggesting the reactivation of selenium vacancies (VSe) as well as the creation of additional indium copper antisites (InCu). For cleaved samples, a direct influence of hydrogen on the net-donor concentration has been assumed. The resulting Cu-depleted surface is the result of the downward band bending and the migration of Cu into the bulk by the built-in electric field. The subsequent oxidation leads to a passivation of VSe and InCu, and hence yields a reconversion of the conductivity type. © 2002 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 195-197 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The anisotropic optical constants of slightly In-rich CuInSe2 are determined on the (112) surface of a naturally grown single-crystal sample with orientation domains using generalized spectroscopic ellipsometry for photon energies between 0.8 and 4.5 eV. Orientation domains within the sample, revealed by electron diffraction investigation, cause biaxial response of the sample surface. The CuInSe2 dielectric functions are extracted at each wavelength rigorously considering orientation domains and surface roughness effects, and improve previous results. © 2001 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1362-1364 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The defect depth distribution caused by a 500 eV nitrogen ion beam etching (IBE) of an Al0.35Ga0.65As/GaAs multiple quantum well (MQW) structure was investigated by confocal photoluminescence (PL) measurements on a beveled section of the sample. The beveled section with an extremely small inclination angle necessary for the high depth resolution was fabricated by the IBE itself. Compared to other ion beam or plasma assisted etching processes reported, e.g., Ar-IBE, the 500 eV nitrogen IBE yields a very low defect density. A model including diffusion effects for the description of the profile gives a value of 4×10−15 cm2 /s for the defect diffusion coefficient. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    General and Comparative Endocrinology 96 (1994), S. 270-275 
    ISSN: 0016-6480
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Medicine
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1432-0630
    Keywords: PACS: 81.65.Cf
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. The replication of submicrometer-sized structures is accomplished utilizing replica molding of a UV-cured acrylate blend. Atomic force microscopy (AFM), optical, and scanning electron microscope images reveal acrylate residues on the Si-master after replication. The differences between excimer laser and reactive ion cleaning of the Si-masters in terms of their effectiveness and reliability is discussed. Forty to sixty KrF laser pulses at 400 mJ/cm2 are suitable for removing acrylate residues from the Si-masters, while the oxygen plasma etching removes acrylate residues only to a limited degree because of a silicon diacrylate constituent in the acrylate blend.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Journal of thermal analysis and calorimetry 6 (1974), S. 371-378 
    ISSN: 1572-8943
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Description / Table of Contents: Résumé Description d'un appareil ATD fonctionnant entre −100 et +150 °C. Les auteurs ont mis au point un nouveau système desmesure; la programmation de la température et l'enregistrement ont fait l'objet de modifications sur l'appareil ATD-02 universel, répandu dans la République Démocratique Allemande. On montre, à l'aide de quelques résultats que l'appareil permet l'étude du comportement thermique des huiles et des graisses avec une sensibilité élevée et une bonne ligne de base. On discute, en outre, les problèmes des analyses des huiles et des graisses.
    Abstract: Zusammenfassung Es wird eine DTA-Apparatur beschrieben, die zur Durchführung von thermoanalytischen Untersuchungen im Temperaturbereich von −100 bis +150° geeignet ist. Während das Meßsystem eine Neuentwicklung darstellt, werden zur Temperregelung und Registrierung modifizierte Baugruppen, der serienmäßig in der DDR gefertigten Apparatur DTA-02-Universal verwendet. An einigen Meßergebnissen wird gezeigt, daß sich mit der Apparatur thermoanalytische Öl- und Fettuntersuchungen mit hoher Empfindlichkeit bei gutem Verlauf der Nullinie durchführen lassen. Weiterhin wird auf die Problematik von Öl- und Fettuntersuchungen eingegangen.
    Notes: Abstract A DTA apparatus is described which is suitable for investigations by thermal analysis in the temperature range from −100° to +150°. While the system of measuring is a recent development, modified models of the DTA 02 Universal Apparatus manufactured wholesale in the German Democratic Republic are used. The experimental results demonstrate that this apparatus permits high-sensitivity oil and fat investigations by differential thermal analysis, with good zero-line behaviour. The problem of analysing oils and fats is also dealt with.
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Biomedical engineering 13 (1979), S. 252-256 
    ISSN: 1573-8256
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine , Technology
    Type of Medium: Electronic Resource
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  • 10
    Publication Date: 1998-03-01
    Print ISSN: 0034-6748
    Electronic ISSN: 1089-7623
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
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