ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Multiple-energy nitrogen ions (energies:1 to 100 keV and a net concentration:2.24 x 1020cm-3) are implanted into ZnO bulk single crystals grown by the hydrothermal method. Rutherfordbackscattering-channeling studies show the presence of displaced Zn atoms (Zni) of about 4 % inas-implanted samples. An A-emission band related to the interstitial oxygen (Oi) is observed at 580nm in 600 oC-annealed samples, and a new emission appears at 515 nm in 800 oC-annealed samples.It is proposed that the new emission band consists of the superposition of the green band (~525 nm)observed in unimplanted ZnO and the residual A-emission band. In 800 oC-annealed samples, aband to acceptor transition at 3.26 eV is also observed in addition to a donor to acceptor pairtransition, suggesting that nitrogen acceptor is located at about 180 meV above the valence band. Athermally stimulated current peak, P1 (165 meV), which has been attributed to a native point defect,observed in unimplanted samples almost disappears in nitrogen-implanted samples annealed at 800oC
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1361.pdf
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