ISSN:
1572-9486
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Conclusion The present resulte are in general agreement with those obtained earlier, e.g. in /2/. The complete removal of post-implantation defects in As-implanted Si may be achieved by thermal annealing at temperatures above 700°C and by laser annealing as well. More than 50% of the implanted As atoms enter the host lattice sites during the thermal annealing. By laser annealing, on the other hand, 9056 of the As atoms become substitutional.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01604491
Permalink