ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Plan-view transmission electron microscopy (TEM) was applied to investigate the origin ofsurface defects in 4H-SiC homoepitaxial films. Their origin existed at the substrate/epi-film interface.Hence, almost the entire thickness of the epi-film was removed by plasma etching leaving a very thinfilm. Then, the etched epi-crystal was thinned from the substrate side so that we could observe thecrystallographic imperfections at the substrate/epi-film interface in plan-view TEM. Morphologicalfeatures of the epi-film surface remained unchanged after the plasma etching process. Hence,one-to-one correspondence between surface defects and crystallographic imperfections wasconfirmed by comparing optical micrographs and TEM images. Crystallographic imperfectionsassociated with “carrot defects” were observed. They were composed of stacking faults on the (0001)plane and partial dislocations bounding them. These imperfections originated from foreign particlesat the interface. From X-ray energy-dispersive spectrometry (XEDS), it was confirmed that particlescontained zirconium (Zr). Selected area diffraction patterns showed that the particles werecrystalline
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.399.pdf
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