ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract A method is proposed for growing stacked InAs/InGaAs self-organized quantum dots on GaAs substrates. The technique allows fabrication of structures exhibiting intense and narrow-line photoluminescence in the 1.3 µm wavelength region. The influence of growth conditions on structural and optical characteristics was studied. The proposed structures show promise in developing vertical-cavity surface-emitting devices.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1188034
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