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  • 1
    Electronic Resource
    Electronic Resource
    Strain in epitaxial CoSi2 films on Si (111) and inference for pseudomorphic growth (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1874-1876 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The perpendicular x-ray strain of epitaxial CoSi2 films grown on Si(111) substrates at ∼600 °C was measured at temperatures from 24 up to 650 °C. At 600 °C, the perpendicular x-ray strain is −0.86%, which is about the x-ray strain that a stress-free CoSi2 film on Si(111) would have at that temperature. This result shows that the stress in the epitaxial CoSi2 film is fully relaxed at the growth temperature. Strains in the film below the growth temperature are induced by the difference in the thermal expansion coefficient of CoSi2 and Si, αf−αs=0.65×10−5/°C. Within experimental error margins, the strain increases linearly with decreasing temperature at a rate of (1.3±0.1)×10−5/C. The slope of the strain-temperature dependence, obtained by assuming that the density of misfit dislocations formed at the growth temperature remains unchanged, agrees with the measured slope if the unknown Poisson ratio of CoSi2 is assumed to be νf=1/3. These observations support three rules postulated for epitaxial growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102327
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  • 2
    Electronic Resource
    Electronic Resource
    Heteroepitaxial relationships for CrSi2 thin films on Si(111) (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3088-3094 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vacuum evaporation techniques were applied to the epitaxial growth of CrSi2 on Si(111) substrates. There are two CrSi2 matching faces which offer good lattice matchings, and which are observed experimentally: the (001) and the (111). These are present together in films grown by reactive deposition at temperatures from 450 to 1000 °C, with the latter matching face becoming more dominant as the growth temperature is raised. During an anneal at 1100 °C, however, the regions of the (111) matching face disappear in films ≥∼84 A(ring) thick. Moderately good epitaxial alignment is obtained with the other matching face operative. Films ≤∼30 A(ring) thick yield an opposite result: they adopt exclusively the (111) matching face as a result of this anneal. For both heteroepitaxial relationships, a strong islanding tendency is manifested during growth (unless the CrSi2 layer is more than a few thousands of angströms thick), which is accentuated by such a post-growth anneal. The population of CrSi2 islands exhibits a gradual strain relaxation with increasing average island size. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359539
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of 28Si+ and 40Ar+ ion-implanted epitaxial ReSi2 films on an n-Si(100) substrate (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1046-1050 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and electrical characteristics of 300 keV Si+ or 380 keV Ar+ ion-implanted epitaxial ReSi2 films grown on an n-Si(100) substrate have been studied by using 2 MeV 4He+ ion backscattering spectrometry, x-ray diffraction, high-resolution transmission electron microscopy, and electrical measurement. Ion implantation causes static disorder in the film, which overlap and grow to become an amorphous layer. The threshold dose for amorphizing the ReSi2 film is ∼5×1014/cm2 for 28Si+ and ∼1×1014/cm2 for 40Ar+. Although the resistivity of the implanted ReSi2 film decreases when the degree of disorder (or the implantation dose) is increased, the resistivity reaches a minimum value at a dose of ∼1×1015/cm2 for Si+ or ∼5×1014/cm2 for Ar+. The 28Si+-implanted amorphous ReSi2 films recovered original epitaxy after thermal annealing at 700 °C for 30 min in vacuum, as do the partly amorphized ReSi2 films by 40Ar+ implantation. On the other hand, those films fully amorphized by 40Ar+ implantation (dose≥1×1014/cm2) did not recover after thermal annealing, even when exposed to a temperature as high as 1000 °C for 30 min.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354951
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  • 4
    Electronic Resource
    Electronic Resource
    Epitaxial CoSi2 films on Si(100) by solid-phase reaction (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3882-3891 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The inversion of a bilayer of Co on top of Ti and a Si(100) substrate upon steady-state annealing, and the resultant formation of an epitaxial CoSi2 layer have been studied using both reactive (N2, N2+5% H2, He+14% H2) and nonreactive (vacuum) annealing ambients. In nitrogen, a high-quality, single-crystalline CoSi2 layer forms above 600 °C for 30 min, with an abrupt interface to the substrate. As the fraction of hydrogen in the ambient increases, the abruptness of the interface deteriorates slightly. On top of this silicide, the Ti is chemically bound with oxygen present as a contaminant. In the case of a nonreactive annealing ambient, the Co/Ti inversion still takes place, although it is only partial. Moreover, the interface is very rough. The structure is unstable above 800 °C for 30 min annealing and transforms into a mixed layer of Co0.25Ti0.75Si2 and epitaxial CoSi2 grains. Using isothermal vacuum annealings with varying durations, a square-root time dependence is observed for the growth of the epitaxial CoSi2 in a temperature range around 700 °C. An activation energy of Ea=3.5 eV is found for that process, which is higher than the 2.3 eV reported for the polycrystalline growth of CoSi2 and is attributed to this structural dissimilarity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356033
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  • 5
    Electronic Resource
    Electronic Resource
    Epitaxial ternary RexMo1−xSi2 thin films on Si(100) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3924-3927 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactive deposition epitaxy was used to synthesize thin layers of RexMo1−xSi2 on Si(100). In the case of x=1, ReSi2 layers of excellent crystalline quality have been reported previously [J. E. Mahan, K. M. Geib, G. Y. Robinson, R. G. Long, Y. Xinghua, G. Bai, and M.-A. Nicolet, Appl. Phys. Lett. 56, 2439 (1990)]. In the case of x=0, however, virtually no alignment of the MoSi2 and the substrate is found, although this silicide is nearly isomorphic to ReSi2. For intermediate values of x, highly epitaxial ternary silicides are obtained, at least for a Mo fraction up to 1/3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356038
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  • 6
    Electronic Resource
    Electronic Resource
    Growth of epitaxial C54 TiSi2 on Si(111) substrate by in situ annealing in ultrahigh vacuum (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3812-3815 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of Ti and the formation of epitaxial Ti silicide on Si(111)-7×7 were investigated by using reflection high-energy electron diffraction (RHEED) and high-resolution transmission electron microscopy (HRTEM). The growth mode of Ti is Stransky–Krastanov type when the substrate temperature is room temperature (RT). On the other hand, it is Volmer–Weber type when the substrate temperature is ∼550 °C. The HRTEM lattice image and transmission electron diffraction pattern show that C54 TiSi2 is grown epitaxially on a Si substrate when 160 ML of Ti is deposited on a Si(111)-7×7 surface at RT followed by in situ annealing at 750 °C for 10 min in ultrahigh vacuum (UHV). The TiSi2/Si interface is somewhat incoherent, but the developed TiSi2 crystallites are single crystal with matching face relationships of TiSi2(111)(parallel)Si(111), TiSi2(311)(parallel)Si(111), and TiSi2(022)(parallel)Si(111). A thin single-crystal Si overlayer with [111] direction is grown on the TiSi2 surface when TiSi2/Si(111) is annealed at ∼900 °C in UHV, which is confirmed by observing the Si(111)-7×7 RHEED pattern.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350895
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  • 7
    Electronic Resource
    Electronic Resource
    Carbon substrates for backscattering spectrometry analysis (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 1589-1590 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Graphite coated with a thin layer of photoresist and annealed in an inert ambient to vitrify the coating makes light, smooth substrates that are as good as polished diamond for the analysis of thin films by MeV He backscattering spectrometry. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1334623
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  • 8
    Electronic Resource
    Electronic Resource
    Strain in porous Si with and without capping layers (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2201-2205 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The strain of porous Si formed on p+-Si wafers without and with GeSi or CoSi2 capping layers were analyzed by double crystal x-ray diffractometry, MeV 4He backscattering spectrometry, and Auger electron spectroscopy. The parallel strain is zero for all the samples. The perpendicular strain of uncapped porous Si is positive, and decreases from ∼0.3% to ∼−0.6% upon vacuum annealing at 600 °C for 30 min. That of GeSi-capped porous Si is negative (∼−0.1%) and remains unchanged upon the same annealing. The perpendicular strain of CoSi2-capped porous Si also decreases due to the pinholes in the CoSi2 layer. We propose that the decrease of strain upon thermal annealing in vacuum is a result of the desorption of physisorbed gas molecules from the native oxide of the pore walls in the porous Si layer. The strain of annealed uncapped-porous Si increases again when stored in ambient air at room temperature, with a time constant on the order of days, while no change was detected for the annealed GeSi-capped porous Si. A little increase was observed for the annealed CoSi2-capped porous Si due to the existence of the pinholes. We attribute the increase of strain to adsorption of gas molecules (H2O in particular) from air.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348750
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  • 9
    Electronic Resource
    Electronic Resource
    Epitaxial films of semiconducting FeSi2 on (001) silicon (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2126-2128 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of the semiconducting transition metal silicide, beta-FeSi2, were grown on (001) silicon wafers. The observed matching face relationship is FeSi2(100)/Si(001), with the azimuthal orientation being FeSi2[010]||||Si〈110〉. This heteroepitaxial relationship has a common unit mesh of 59 A(ring)2 area, with a mismatch of 2.1%. There is a strong tendency toward island formation within this heteroepitaxial system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103235
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  • 10
    Electronic Resource
    Electronic Resource
    Formation of epitaxial CoSi2 on Si(100): Role of the annealing ambient (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 243-245 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: With a thin Ti layer interposed between a Si(100) substrate and a Co overlayer, the inversion of the Co and Ti films and the formation of a partly relaxed epitaxial CoSi2 layer on Si(100) can be obtained by steady-state annealing in inert as well as reactive ambients. A reactive ambient chemically binds the Ti near the surface as an oxide or nitride layer, which preserves the bilayer structure during a high temperature treatment. In a nonreactive ambient, the Ti and CoSi2 layers react further, resulting in a uniform layer of Co0.25Ti0.75Si2 and CoSi2. An eptiaxial orientation of CoSi2 is retained even in that case.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108978
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