ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
N+ 4H-SiC commercial substrates with n-type epilayers have been used to realize bipolardiodes and TLM structures. The p-type emitter of diodes was realized by Al implantations followedby a post-implantation annealing with or without a graphite capping layer. Ohmic contacts wereformed by depositing Ti/Ni on the backside and Ni/Al on the topside of the wafer. It appears thatcapping the sample during the annealing reduces considerably the surface roughness and the specificcontact resistance. Sheet resistance and specific contact resistance as low as 2kΩ/□ and respectively1.75×10-4 Ωcm² at 300 K have been obtained. I-V measurements as a function of temperature havebeen performed from ~100 to ~500 K. The variations of the series resistance vs. temperature can beexplained by the freeze-out of carriers and by the variation of carrier mobility
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.639.pdf
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