ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Chemical vapor deposition of (111) 3C-SiC on (110) Si substrate was carried out, and the effect of the substrate off-axis introduced on (110) Si substrate for suppressing the twin formation in 3C-SiC hetero-epitaxial layers was investigated. From the growth on hemispherically polished (110) Si substrate, it was found that the off-axis toward the [001] Si axis had a noble effect for suppressing the twin formation, while the off-axis toward the [110] Si axis was ineffective. The growth of single 3C-SiC crystal containing few double positioning boundaries, which are related with the twin formation, was demonstrated on the (110) Si substrate 3° off-axis toward the [001] Si axis. Transmission electron microscopic observationrevealed that double positioning boundaries on the (110) Si substrate off-axis toward the [001] Si axis were nearly eliminated within the initial a few hundreds nano meter in thickness
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/10/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.483-485.193.pdf
Permalink