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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5064-5067 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep localized-state distribution in amorphous arsenic triselenide thin films has been measured with a modulated photocurrent technique. A peak in the deep localized-state distribution is found at 0.79 eV above the valence-band mobility edge. It is also found that the thermal emission rate of holes from the localized state at the peak is almost constant in the room-temperature range but exhibits thermally activated behavior below and above the room-temperature range. This anomalous temperature dependence of the thermal emission rate is interpreted on the basis of a thermally created defect.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3612-3615 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultraviolet (UV) light-induced metastable states of transient hole transport in amorphous polymethylphenylsilane (PMPS) have been investigated with a time-of-flight technique. No change in the hole drift mobility is detected after UV light soaking, while the hole lifetime is reduced by UV light irradiation because of the increase in silicon (Si) dangling bond density. The photoscission of Si backbone chain is enhanced by the application of electric field to PMPS during UV light exposure. The origin of this enhancement is discussed. The annealing behavior of the light-induced metastable state has also been investigated at various temperatures. The light soaking and annealing behavior of PMPS is found to be similar to that of hydrogenated amorphous Si.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3541-3542 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method has been proposed for the determination of localized-state distributions in amorphous semiconductors from transient photoconductivity using Laplace transforms [H. Naito, J. Ding, and M. Okuda, Appl. Phys. Lett. 64, 1830 (1994)]. The method is applicable to both pre- and postrecombination regimes of transient photoconductivity, and to amorphous semiconductors exhibiting either nondispersive or dispersive transport. To simplify the analysis of the method, a new approach with the same advantages of the method is presented. © 1995 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1119-1125 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transient charging currents in nematic liquid crystals have been measured with a single- and a double-voltage pulse technique to elucidate the role of impurity ions incorporated in the materials in the transient charging processes. In the single pulse experiment, a peak in the current transient is observed in the nematic phase. It is shown that occurrence of the peak is due to the alignment of the director of the liquid crystal molecules in the direction of applied electric field. In the double pulse experiment, a voltage pulse (prepulse) is applied to the liquid crystal before the measurement of the transient current. It is observed that the application of the prepulse significantly alters the shape of the current. The changes in the current can be explained by considering the impurity ion distribution, modified by the prepulse, in the nematic liquid crystals. It is concluded that the double pulse experiment is a powerful tool for the examination of the influence of impurity ions in liquid crystals on the current transients.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1246-1251 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Delayed collection field experiments, which are known to be a method for measuring lifetimes in amorphous semiconductors, are examined for amorphous arsenic triselenide. It is experimentally shown that the effective transit time is approximately equal to the delay time, when the delay time is long compared with the zero-delay transit time, and that the effective transit time is almost independent of collection electric field and temperature. These results are found to be consistent with the prediction by Kastner [Solid State Commun. 45, 191 (1983)], which is based upon the multiple trapping model. Influence of a structured, tail-state distribution on the experimental results has been also numerically examined.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4533-4537 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transient photocurrents in amorphous selenium (a-Se) and nematic liquid crystal (NLC) double layers have been investigated to elucidate the charge carrier transport process in NLC. It is shown that the transient photocurrents obtained in the experiment are space-charge limited currents induced by the delayed charge injection from the a-Se layer to the NLC layer. The mobile charge carriers are found to be positive ions with the drift mobility of 3.5×10−6 cm2/V s at 303 K and the ionic radius of 0.32 nm in 4-cyano-4′-alkyl-biphenyl. The origin of the ions is briefly discussed. © 1995 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 252-259 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Localized-state distributions have been studied in a molecularly doped polymer (MDP) system of a polymer binder (polycarbonate) doped with charge-transporting [N, N′-diphenyl-N, N′-bis(3-methylphenyl)(1,1′-biphenyl)-4,4′-diamine (TPD)] and trap-forming molecules [1-phenyl-3-(p-diethylaminostyryl)-5-(p-diethylaminophenyl)pyrazoline (PRA)] simultaneously by means of the conventional time-of-flight (TOF) transient photocurrent measurements. The existence of a transport energy in the MDP system is experimentally shown by comparing Gaussian distributions of localized states deduced by the Gaussian disorder model, due to Bässler and co-workers [H. Bässler, Phys. Status Solidi B 175, 15 (1993)], with localized-state distributions determined from the analysis of the TOF transient photocurrent data, based on the trap-controlled band transport [H. Naito, J. Ding, and M. Okuda, Appl. Phys. Lett. 64, 1830 (1994)]. The transport energy is found to be located at the center of the Gaussian distribution due to the host TPD molecules. It is also found that at 0.1 mol % PRA addition, the Gaussian distribution of localized states due to TPD molecules is broadened through the random electrostatic potential generated by dipoles of PRA, and at 1 mol % PRA addition, the localized-state structure due to PRA molecules, as well as the further broadening of the Gaussian distribution, are observed. The energy level of the structure is determined to be 0.54 eV above the transport energy, which is almost equal to the difference in the ionization potential between PRA and TPD. © 2000 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5026-5035 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The energy resolution of a method for measuring localized-state distributions in amorphous and polymeric semiconductors has been improved in terms of Tikhonov regularization. The method is based on the analysis of transient photoconductivity data using Laplace transforms, and is valid for both pre- and postmonomolecular recombination regimes of the transient photoconductivity. The improvement of the energy resolution is shown using transient photoconductivity data numerically generated from model localized-state distributions appropriate for the materials. In addition, the measurement of localized-state distributions from time-of-flight transient photocurrents is examined. The applicability of the method with improved energy resolution is demonstrated for undoped hydrogenated amorphous silicon, poly(para-phenylene vinylene) and poly(methylphenylsilane). © 1999 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 251-257 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bipolar transport and photocarrier generation processes in thin films of 3,5-dimethyl-3′,5′-di- tert-butyl-4,4′-diphenoquinone (MBDQ) doped polymethylphenylsilane (PMPS) are studied in terms of optical absorption, photoluminescence, the standard time-of-flight, and electroabsorption experiments. With increasing MBDQ concentration, the electron drift mobility is observable above 30 wt. % MBDQ addition (5.0×10−7 cm2/Vs at 40 wt. % MBDQ addition) and the hole drift mobility is unchanged (∼1.0×10−4 cm2/Vs) for 0–40 wt. % MBDQ addition. The photocarrier generation efficiency is increased by an order of magnitude over pristine PMPS for 30–40 wt. % MBDQ addition in a visible spectral range. The electroabsorption experiments of MBDQ/PMPS composites show that the existence of charge transfer states becomes evident with increasing MBDQ concentration, which facilitate the photocarrier generation in the spectral range. © 2002 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2198-2200 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoelectric properties of a series of N-carbazolyl-substituted silane copolymers have been studied by optical absorption, photoluminescence, and time-of-flight transient photocurrent measurements. It is found in N-carbazolyl-substituted silane copolymers that the optical absorption and the photoluminescence bands of the carbazolyl side groups, superimposed on those of the Si backbones, are observed in the blue to ultraviolet spectrum region. The hole drift mobilities of the copolymers are essentially the same as those of polymethylphenylsilane (PMePhSi) and are higher than those of poly(N-vinylcarbazole), and the photocarrier generation efficiencies of the copolymers are higher than those of PMePhSi. These results indicate that the photogenerated charge carriers on the carbazolyl side groups transfer to the Si backbones and then proceed through the Si backbones. © 2000 American Institute of Physics.
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