ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Thin films of SiC and cordierite were deposited on Si (100) by pulsed laser evaporation (PLE) technique at various substrate temperatures. Auger, X-ray photoelectron spectroscopy, and grazing incidence X-ray diffraction were used to investigate the stoichiometry, chemistry, and structure of the PLE-deposited films. The results indicate that properties of SiC films were affected by the substrate temperature. The SiC films grown at 25 °C were amorphous and were a physical mixture of silicon, carbon and very little SiC. The films deposited at 500 and 900 °C substrate temperature were polycrystalline SiC. The as-deposited cordierite films were stoichiometric crystalline.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01129963
Permalink