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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applicable algebra in engineering, communication and computing 7 (1995), S. 41-51 
    ISSN: 1432-0622
    Keywords: Keywords: Parallel complexity ; Algebraic complexity theory ; Arithmetic networks ; Semi-algebraic sets ; Borel ; Moore homology.
    Source: Springer Online Journal Archives 1860-2000
    Topics: Computer Science , Mathematics , Technology
    Notes: Abstract.  We show lower bounds for the parallel complexity of membership problems in semialgebraic sets. Our lower bounds are obtained from the Euler characteristic and the sum of Betti numbers. We remark that these lower bounds are polynomial (an square root) in the sequential lower bounds obtained by Andrew C.C. Yao.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1399-0047
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Dodecaheme cytochrome c has been purified from Desulfovibrio (D.) desulfuricans ATCC 27774 cells grown under both nitrate and sulfate-respiring conditions. Therefore, it is likely to play a role in the electron-transfer system of both respiratory chains. Its molecular mass (37768 kDa) was determined by electrospray mass spectrometry. Its first 39 amino acids were sequenced and a motif was found between amino acids 32 and 37 that seems to exist in all the cytochromes of the c3 type from sulfate-reducing bacteria sequenced at present. The midpoint redox potentials of this cytochrome were estimated to be −68, −120, −248 and −310 mV. Electron paramagnetic resonance spectroscopy of the oxidized cytochrome shows several low-spin components with a gmax spreading from 3.254 to 2.983. Two crystalline forms were obtained by vapour diffusion from a solution containing 2% PEG 6000 and 0.25–0.75 M acetate buffer pH = 5.5. Both crystals belong to monoclinic space groups: one is P21, with a = 61.00, b = 106.19, c = 82.05 Å, β = 103.61°, and the other is C2 with a = 152.17, b = 98.45, c = 89.24 Å, β = 119.18°. Density measurements of the P21 crystals suggest that there are two independent molecules in the asymmetric unit. Self-rotation function calculations indicate, in both crystal forms, the presence of a non-crystallographic axis perpendicular to the crystallographic twofold axis. This result and the calculated values for the volume per unit molecular weight of the C2 crystals suggest the presence of two or four molecules in the asymmetric unit.
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  • 3
    ISSN: 1399-0047
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Crystals of rubredoxin oxygen oxidoreductase have been obtained and characterized. They belong to space group P21212, with unit-cell dimensions a = 88.24 (15), b = 101.25 (7), c = 90.80 (3) Å. The homodimer (86 kDa) in the asymmetric unit is related by a non-crystallographic twofold rotation axis parallel to the ab `diagonal' direction, as shown by the self-rotation maximum in the section with χ = 180°. This pseudo-crystallographic symmetry element was also found to be the twinning axis of pseudo-merohedrally twinned crystals, leading to apparent pseudo-tetragonal P4212 crystal symmetry.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 50 (1994), S. 233-236 
    ISSN: 1399-0047
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Crystals of the tetra-heme cytochrome c3 (Mr = 13 kDa, 107 residues, four heme groups) from sulfate- and nitrate-reducing Desulfovibrio desulfuricans ATCC 27774 have been obtained and crystallographically characterized. They belong to space group P6122 with cell dimensions a = b = 61.84 (4) and c = 109.7 (2) Å, and Z = 12. Intensity data were initially collected on a FAST system with a rotating-anode X-ray source leading to a total of 22 592 observations, from which only 4930 were unique, in the resolution range 20.0–2.4 Å with an Rmerge(I) of 7.0%. Higher resolution data were measured on a FAST system at station 9.6 of the SRS (Daresbury, England), leading to 19 328 intensities, of which 11 179 were unique, in the resolution range 20.0–1.75 Å and an Rmerge(I) of 5.5%. Cross-rotation and translation functions were performed with ALMN and TFSGEN programs from the CCP4 suite. The packing of the molecules in the unit cell was checked with TOM/FRODO. Rigid-body refinement of the model and subsequent refinement using molecular dynamics were performed with X-PLOR, leading to a current R factor of 25.9%, for data up to 2.3 Å.
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  • 5
    ISSN: 0020-1693
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7058-7061 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the correlation between contact resistance, heat treatment, and micro structure in ohmic contacts on n-InP. The samples consisted of three different structures: 50 nm-Ni/200 nm-AuGe/n-InP, Au/100 nm-Pt/100 nm-Ti/50 nm-Ni/n-InP, and 200 nm-Au/100 nm-Pt/100 nm-Ti/50 nm-Ni/200 nm-AuGe/n-InP. After annealing the samples, depth profiles obtained by Auger electron spectroscopy and ion sputtering showed a tendency of the Ge to migrate from the Au–Ge alloy towards the Ni layer, as well as an accumulation of Ni at the semiconductor interface. A Ni–P phase is identified as being responsible for the ohmic character of the metal/InP interface. Specific contact resistivities were measured for the three different types of metallizations. We observed that the resistivity is sensitive to the annealing temperature and related to the amount of Ni at the metal/InP interface. The use of overlayers is suggested to avoid migration of the semiconductor components towards the contact surface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 9324-9334 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The production of acoustic waves by the absorption of radiation, known as the photoacoustic effect, is described by two coupled differential equations for pressure and temperature. Here, solutions to the coupled equations are given for sinusoidal deposition of heat in space as is typically generated using two picosecond laser beams to form a transient grating. The solutions to the coupled equations, along with the equation of state of the fluid, gives the pressure, temperature, and density of the fluid following rapid deposition of heat. The time dependence of the grating diffraction efficiency is readily calculated from the modulation of the density and temperature. For small values of the viscosity and heat conduction parameters, closed form expressions for the state variables are given which describe thermal and acoustic modes of wave motion in the fluid. The method is applied for computation of the state variables using a frequency-dependent viscosity. Experiments with ethylene glycol are reported where the viscosity and sound speed are measured as functions of temperature.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4900-4902 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work reports on magnetic dichroism in photoemission from the Gd 4l(l=s,p,d,f ) core level of in-plane magnetized Gd films excited with linearly, circularly, and unpolarized light. Thin Gd films of about 100 ML thickness were evaporated onto a W(110) substrate at room temperature, and subsequently annealed to 700 K to form an ordered layer exhibiting a (0001) surface. The dichroism measurements were performed by physically rotating the sample azimuth so as to change the direction of the magnetization axis relative to the incident light. The magnetic dichroism asymmetries were obtained by calculating the normalized difference between spectra obtained with the two mutually orthogonal orientations of the magnetization. Strong asymmetries were observed, even if exciting the spectra by means of unpolarized light. The experimental results are compared to three-step photoemission cluster calculations based on a relativistic full potential algorithm respecting magnetic exchange. © 2000 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2446-2448 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of postdeposition annealing in vacuum and in dry O2 on the atomic transport and chemical stability of chemical vapor deposited ZrSixOy films on Si is investigated. Rutherford backscattering spectrometry, narrow nuclear resonance profiling, and low energy ion scattering spectroscopy were used to obtain depth distributions of Si, O, and Zr in the films. The chemical environment of these elements in near-surface and near-interface regions was identified by angle-resolved x-ray photoelectron spectroscopy. It is shown that although the interface region is rather stable, the surface region presents an accumulation of Si after thermal annealing. © 2001 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3601-3603 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Initial stages of oxidation of single-crystal, Si-faced silicon carbide were investigated using ion scattering and angle-resolved x-ray photoelectron spectroscopies. The very first oxidation products are shown to be silicon oxycarbides (SiCxOy), while, for longer oxidation times, a mixture of SiCxOy and SiO2 is formed in the near-surface region of the growing oxide film. The composition of the near-surface region of such thin films is very similar to that reported in previous investigations for the near-interface region when thicker oxides films are grown on SiC. © 2001 American Institute of Physics.
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