ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We demonstrate a Dual-Pearson approach to model ion-implanted Al concentrationprofiles in 4H-SiC for high-precision design of high-voltage power devices. Based on the MonteCarlo simulated data for 35-400 keV implantation, we determine the nine Dual-Pearson parametersand confirm precise reproduction of profiles of 1015-1021 cm-3 Al with sufficient smoothness. Thisleads to a direct incorporation of implanted Al profiles into a device simulator. The influence of doseand energy on channeling is also discussed from the view point of implantation-induced disorder in4H-SiC
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.607.pdf
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