Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
66 (1995), S. 2382-2384
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Carbon ions were implanted into crystal silicon wafers at an energy of 50 keV and with a dose of 1017 cm−2 followed by thermal annealing. A layer of polycrystalline β-SiC was formed beneath the sample surface. Porous nanometer structures were prepared by conventional anodization. At room temperature, the samples exhibit a blue luminescence peak at 2.79 eV (445 nm), which is higher than the energy gap of bulk β-SiC (2.2 eV), and its intensity is stronger than that of the reference porous silicon. The results could be explained by the quantum confinement effect. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.113990
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