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  • 1
    Electronic Resource
    Electronic Resource
    Age and duration of Peking man site by fission track method
    Amsterdam : Elsevier
    International Journal of Radiation Applications & Instrumentation. Part D, 19 (1991), S. 719-724 
    Details
    ISSN: 1359-0189
    Keywords: Fission track dating ; age and duration of Peking Man Site ; ancient ash ; sphene
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/1359-0189(91)90299-W
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  • 2
    Electronic Resource
    Electronic Resource
    Comparison between fission track method and laser-fluorometry and fluorocolorimetry for determination of uranium concentration in natural water
    Amsterdam : Elsevier
    International Journal of Radiation Applications & Instrumentation. Part D, 12 (1986), S. 801-804 
    Details
    ISSN: 1359-0189
    Keywords: Fission track method ; fluorocolorimetry ; laser-fluorometry ; natural water ; polycarbonate track detector ; uranium concentration
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/1359-0189(86)90706-5
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  • 3
    Electronic Resource
    Electronic Resource
    Ion energy effects in AlN thin films grown on Si(111) (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1788-1793 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report growth of epitaxial AlN thin films on Si(111) in a N2 glow discharge using a modified direct current magnetron sputter source in ultrahigh vacuum. Using such a device, we show that the plasma potential of the glow discharge can be varied over a wide range without significant changes in film growth rate and ion density. We show further that changing the plasma potential significantly and systematically affects the lattice strain and the mosaic structure of the AlN films. We show significant straining of the AlN lattice and suggest the occurrence of AlN lattice damage when N+2 ions acquire energies in excess of +50 eV. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360970
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  • 4
    Electronic Resource
    Electronic Resource
    Growth of aluminum nitride thin films on Si(111) and Si(001): Structural characteristics and development of intrinsic stresses (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3446-3455 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown aluminum nitride thin films by ultrahigh vacuum reactive sputter deposition on Si(111) and Si(001) substrates. We show results of film characterization by Raman scattering, ion beam channeling, and transmission electron microscopy, which establish the occurrence of epitaxial growth of wurtzitic aluminum nitride thin films on Si(111) at temperatures above 600 °C. In contrast, microstructural characterization by transmission electron microscopy shows the formation of highly oriented polycrystalline wurtzitic aluminum nitride thin films on Si(001). Real-time substrate curvature measurements reveal the existence of large intrinsic stresses in aluminum nitride thin films grown on both Si(111) and Si(001) substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356105
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  • 5
    Electronic Resource
    Electronic Resource
    Measurement of intrinsic stresses during growth of aluminum nitride thin films by reactive sputter deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2411-2414 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Real-time measurements of intrinsic stresses during growth of polycrystalline and epitaxial aluminum nitride (AlN) thin films on Si(111) are reported. Our room-temperature measurements on polycrystalline films corroborate previous post-growth measurements. Our high-temperature measurements provide evidence of large intrinsic stresses during epitaxial growth of AlN on Si(111) and insignificant stress relaxation during growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354701
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  • 6
    Electronic Resource
    Electronic Resource
    Simultaneous planar growth of amorphous and crystalline Ni silicides (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2033-2035 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a solid-state interdiffusion reaction induced by rapid thermal annealing and vacuum furnace annealing in evaporated Ni/Si bilayers. Upon heat treatment of a Ni film overlaid on a film of amorphous Si evaporated from a graphite crucible, amorphous and crystalline silicide layers grow uniformly side by side as revealed by cross-sectional transmission electron microscopy and backscattering spectrometry. This phenomenon contrasts with the silicide formation behavior previously observed in the Ni-Si system, and constitutes an interesting counterpart of the solid-state interdiffusion-induced amorphization in Ni/Zr thin-film diffusion couples. Carbon impurity contained in the amorphous Si film stabilizes the amorphous phase. Kinetic and thermodynamic factors that account for the experimental findings are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100494
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  • 7
    Electronic Resource
    Electronic Resource
    Strain effects in epitaxial GaN grown on AlN-buffered Si(111) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7824-7828 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of GaN thin films on AlN-buffered Si(111) by ultrahigh-vacuum rf glow discharge reactive magnetron sputtering is reported. Epitaxy of GaN is established by x-ray and electron diffraction. Raman scattering from the epitaxial films consistent with that of wurtzitic GaN is observed. The ion energies involved in the growth process are quantified by measuring the plasma potentials of the Ar/N2 glow discharge by an emissive Langmuir probe technique. As a function of increasing input power, a systematic increase in ion energies and a systematic straining of the GaN lattice are observed. Measured GaN phonon energy scales with lattice strain. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357916
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  • 8
    Electronic Resource
    Electronic Resource
    Neutron diffraction and transmission electron microscopy study of hydrogen-induced phase transformations in Zr3Al (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1312-1319 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen-induced phase transformations of the equilibrium intermetallic compound Zr3 Al have been studied by in situ elastic neutron scattering, x-ray diffraction, and transmission electron microscopy (TEM). TEM observations reveal two distinct modes of amorphous phase formation in Zr3 Al upon hydrogenation, namely, heterogeneous nucleation at preexisting grain boundaries, and homogeneous nucleation within single-crystal grains. In situ neutron diffraction reveals a phase separation between a hydrogen (deuterium) poor and a hydrogen (deuterium) rich crystalline phase. Rietveld profile refinement of the neutron diffraction data indicates predominant hydrogen (deuterium) occupation of the octahedral interstitial sites in the crystalline matrix that have only Zr nearest-neighbor atoms. The two different modes of amorphous phase nucleation are directly related to the degree of hydrogen dissolution in the host crystalline matrix.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345683
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  • 9
    Electronic Resource
    Electronic Resource
    Ti atomic bonding environment in Ti-containing hydrocarbon coatings (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2415-2422 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report characterization of the average Ti atomic bonding environment in Ti-containing hydrocarbon (Ti–C:H) coatings by x-ray absorption near edge structure (XANES) spectroscopy, extended x-ray absorption fine structure (EXAFS) spectroscopy, and high-resolution transmission electron microscopy (TEM). Ti–C:H coatings have been synthesized in a hybrid chemical vapor deposition/physical vapor deposition deposition system, which combines inductively coupled plasma and sputter deposition. Combining x-ray absorption spectroscopy with high resolution TEM imaging, we have determined that the dissolution limit of Ti atoms in an amorphous hydrocarbon (a-C:H) matrix is between 0.9 and 2.5 atomic percent. At Ti compositions 〉2.5 at. %, XANES and EXAFS data indicate that the average Ti atomic bonding environment in Ti–C:H resembles that in cubic B1–TiC, consistent with direct TEM observation of the precipitation of TiC nanocrystallites in an a-C:H matrix. Beyond the Ti dissolution limit, Ti–C:H coatings are in fact TiC/a-C:H nanocomposites, in which the TiC nanoprecipitates are very much bulk like. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1287121
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  • 10
    Electronic Resource
    Electronic Resource
    Inductively coupled plasma assisted deposition and mechanical properties of metal-free and Ti-containing hydrocarbon coatings (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2840-2848 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal-free amorphous hydrocarbon (a-C:H) and Ti-containing hydrocarbon (Ti–C:H) coatings have been synthesized in a hybrid chemical vapor deposition (CVD)/physical vapor deposition (PVD) system which combines inductively coupled plasma (ICP) and sputter deposition. a-C:H coatings have been fabricated by ICP assisted CVD in inert/hydrocarbon gas mixtures while Ti–C:H coatings have been fabricated by ICP assisted magnetron sputtering of Ti in inert/hydrocarbon gas mixtures. We present results of structural characterization and mechanical property measurements on these a-C:H and Ti–C:H coatings. In particular, the influence of hydrogen on the coating mechanical properties is probed experimentally. We show that hydrogen significantly influences the mechanical properties of a-C:H and Ti–C:H coatings and needs to be considered for a full understanding of the mechanical properties of Ti–C:H coatings. Our results demonstrate that combining ICP with sputter deposition makes a versatile CVD/PVD tool capable of depositing metal-free and metal-containing hydrocarbon coatings with widely varying microstructures and mechanical properties. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372266
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