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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 29 (1973), S. 423-427 
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: The complete spectrum emitted by a conventional X-ray diffraction Cu target produces damage in a small TGS crystal which is evident from the variation of integrated intensities of X-ray reflexions with irradiation time. An interpretation of the data is proposed which assumes that the trapping of irradiation products causes an exponential decrease of mosaic-block diameters. An empirical correction of the Zachariasen extinction factor for crystals belonging to type II is suggested, since the TGS crystal is of this type.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Sensors and Actuators A: Physical 37-38 (1993), S. 516-518 
    ISSN: 0924-4247
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology
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  • 3
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Physics and Chemistry of Solids 46 (1985), S. 1383-1386 
    ISSN: 0022-3697
    Keywords: ferroelectric materials ; phase transition
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8210-8215 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bi12(GaxBi1−x)O19.5 (BGaO) films with thickness in the range 100–1000 nm have been deposited on (100) Y-stabilized zirconia (YSZ) and (100) Bi12GeO20 (BGO) substrates using a KrF excimer pulsed laser and polycrystalline targets with composition x=0.63–0.72. The laser power density threshold for ablation of the targets has been determined to be J0=4.8 J/cm2. A deposition rate of 0.03 A(ring)/pulse was found for the substrate-target distance (6 cm) and laser fluence (J=7 J/cm2) used. Transparent and crystalline films were obtained heating the substrate in the 450–550 °C range under 1.5×10−1 mbar of oxygen pressure. Films deposited on hot substrates have a Ga stoichiometry x=0.5 but a Bi content slightly lower than that corresponding to sillenite. Films deposited on YSZ show preferential orientation. From the x-ray diffraction results and the comparison of the ionic distributions, it has been concluded that the most likely orientation between both lattices is 〈310〉{130}BGaO(parallel)〈011〉{100}YSZ. A {100}BGaO(parallel){100}BGO epitaxy has been inferred from Rutherford backscattering analysis. On both substrates the films behave as step waveguides with refractive index close to the value determined in bulk BGaO. © 1996 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5092-5097 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of ferroelectric composites made from lead zirconate titauate (PZT) ceramic particles and an epoxy resin as matrix have allowed one to establish the constitutional parameters of the composite that characterize the pyroelectric and piezoelectric properties of these materials. The concept of the degree of heterogeneity is introduced to complete the description of these composites, which do not present a defined connectivity. A model is proposed based on consideration of the randomness of the particle distribution in the matrix by using the Monte Carlo method in the calculation of the active volumetric fraction of ceramic. An equivalent circuit of the composites is used to describe their dielectric properties. The model allows one to estimate the effect of the degree of heterogeneity on the properties of the composite. The results of the calculations compare well with the experimental values. Thus the model opens possibilities for the prediction of the properties and design of two-phase ferroelectric composites made from a randomly disperse phase in a matrix.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3602-3604 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-field piezoelectric coefficient and strain were investigated in Ca-modified PbTiO3 thin films by means of optical interferometry. A remanent piezoelectric coefficient of 70 pm/V was observed that agrees well with the values previously reported for the bulk ceramics of the same composition. The efficient poling of the films can be achieved at room temperature under the field of 300 kV/cm. Electrically induced strains as high as 0.8% were observed using a bipolar driving field of 1 MV/cm. Strain response under a unipolar driving field exhibited a good linearity and small hysteresis. These properties combined with the low dielectric constant and high dielectric strength are shown to be attractive for micromechanical applications. © 1996 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 502-504 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Crystalline and stoichiometric KNbO3 thin films have been grown on (100) oriented MgO substrates by pulsed laser deposition technique. Electron microprobe analysis and Rutherford backscattering spectroscopy of the films show a progressive loss of K with increasing substrate-target distance. To compensate for this K loss the ceramic KNbO3 targets were enriched with K2CO3 powder, pressed at room temperature, and sintered at 650 °C. For a substrate-target distance of 6 cm, targets with [K]/[Nb] molar ratio=2.85 yield stoichiometric KNbO3 films. A partial oxygen pressure of 2×10−2 mbar was optimum for growing transparent films. Films grown between 650 and 700 °C show the KNbO3 crystalline phase with its (110) axis preferentially oriented perpendicular to the surface of the substrate. At these temperatures KNbO3 diffusion into the MgO substrate is observed. Films grown from KNbO3 single crystal targets only contain a Mg4Nb2O9 crystalline layer.
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  • 8
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Calcium lead titanate ((Pb,Ca)TiO3) thin films, with calcium contents of ∼50 at.%, have been prepared by chemical solution deposition (CSD). Different synthetic sol–gel methods have been used for the preparation of the precursor solutions. 1,3-propanediol, OH(CH2)3OH, and water, H2O, were used as solvents. Lead (II) acetate trihydrate, Pb(OCOCH3)2·3H2O, and titanium di-isopropoxide bis(acetylacetonate), Ti(OC3H7)2(CH3COCHCOCH3)2, were used as reagents of lead and titanium, respectively. Calcium was incorporated into the solutions as calcium acetate hydrate, Ca(OCOCH3)2·xH2O, or as calcium acetylacetonate hydrate, Ca(CH3COCHCOCH3)2·xH2O. Only the use of calcium acetate led to precipitate-free solutions. Pb(II)–Ti(IV)–Ca(II) sols were obtained when calcium acetate was refluxed with the lead and titanium reagents in a diol–water solvent. These sols led to films with a homogeneous compositional profile. Solutions obtained by mixing a water solution of calcium acetate with a Pb(II)–Ti(IV) sol led to films with a heterogeneous compositional profile in which an interface between the film and the Pt bottom electrode is formed. The films derived from the Pb(II)–Ti(IV)–Ca(II) sols have values of dielectric constant at room temperature of ∼500, which, together with their low leakage currents, low dielectric losses, and tunability, make these films promising for dynamic random access memories and tunable devices.
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  • 9
    ISSN: 0040-6090
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Journal of sol gel science and technology 13 (1998), S. 843-847 
    ISSN: 1573-4846
    Keywords: Rutherford backscattering spectroscopy ; thin films ; lead titanate
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract A depth profile analysis of modified lead titanate thin films was performed by means of Rutherford Backscattering Spectroscopy (RBS). These films were deposited from sol-gel synthesized solutions onto platinized silicon substrates and crystallized by thermal treatments at temperatures of about 650°C. The chemistry of the solution and the thermal treatment for crystallization affect the heterostructure of the resulting films. Losses of lead and formation of substrate-film interfaces are produced during the crystallization of the films. These film characteristics determine their ferroelectric response.
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