Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
63 (1993), S. 1657-1659
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We compare the electron spin resonance (ESR) signal of the dangling bond in porous silicon (PS) layers, produced by electrochemical etching, to the ESR signal from hydrogenated amorphous Si(a-Si:H) films. The anisotropy of the ESR signal from PS showed g values varying as for the Pb Si/SiO2 interface dangling bond. The g value varies from g(parallel)=2.0020 to g⊥=2.0080 with an inhomogeneously broadened line width increasing from 1.8 to 3.8 G. An ESR powder line, with superhyperfine and strain broadening intrinsic to PS, has more anisotropy in g(parallel)−g⊥ and less inhomogeneous broadening than does the dangling bond line in a-Si:H. No evidence was seen for light-induced metastability on a H-passivated PS film.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.110727
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