Publication Date:
2011-08-19
Description:
Samples of epitaxial GaAs grown on (100) Si substrates using molecular beam epitaxy were annealed at four different temperatures, from 800 to 950 C. Following annealing, the samples were analyzed using secondary ion mass spectrometry. Depth profiles of Ga, As, and Si reveal optimum conditions for annealing, and place a lower limit on a damage threshold for GaAs/Si substrates.
Keywords:
ELECTRONICS AND ELECTRICAL ENGINEERING
Type:
Applied Physics Letters (ISSN 0003-6951); 52; 731
Format:
text
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