Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
54 (1989), S. 1338-1340
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
InAs layers were epitaxially grown directly on GaAs, InP, and GaSb at relatively low temperatures by plasma-assisted epitaxy (PAE) in hydrogen plasma. The electronic and crystallographic properties of PAE-InAs grown on substrates with different lattice mismatch were comparatively studied with a variable supply ratio As/In, growth temperature, and thickness of grown films. The electronic properties of PAE-InAs films comparable to those by molecular beam epitaxy (MBE) were obtained in a wide range of supply ratio, with less supply ratio, and at lower temperatures than MBE.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101354
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