Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
59 (1986), S. 97-107
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Recent research on silicon grain boundaries has confirmed the typical features known from earlier work on grain boundaries in germanium and III-V compound semiconductors. However, there is less clarity with respect to the role of the "dangling bonds'' when testing for electrical activity. In silicon a pronounced double barrier with its space-charge layer and a low leakage current rarely forms. Here the Cottrell atmospheres in conjunction with impurity complexes such as SiO, SiO2, and SiO4 can strongly influence the electrical properties in a material with an exceptionally high self-diffusivity. Conditions for the measurability of the longitudinal impurity band-type conduction through space-charge layers in silicon grain boundaries are outlined. It is concluded that in those cases where electrical activity is measured, the conduction parallel to the grain-boundary plane should be apparent for pure material and at low temperature. Experiments are proposed to further our understanding of the properties of grain boundaries in silicon.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.336846
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