Publication Date:
2015-02-21
Description:
Author(s): Yoshiho Masuda, Wataru Norimatsu, and Michiko Kusunoki We report on a nitride interface structure formed between epitaxial graphene and SiC (0001). The nitride interface can be obtained by the pretreatment of SiC in an Ar/N 2 atmosphere at 1600 °C, followed by graphene growth in Ar at 1700 °C. Our detailed high-resolution transmission electron microscopy... [Phys. Rev. B 91, 075421] Published Fri Feb 20, 2015
Keywords:
Surface physics, nanoscale physics, low-dimensional systems
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
Permalink