Publication Date:
2011-09-20
Description:
Composition profiles in and around GaInAs layers of InP/GaInAs/InP heterostructures grown by MOVPE were measured by the X-ray CTR scattering and the cross-sectional STM (XSTM) techniques. In the XSTM images, brightness fluctuations in GaInAs are clearly observed. It is discussed in terms of composition fluctuations in GaInAs and a possibility of clustering of GaAs-rich and InAs-rich regions is indicated. The compositions of Ga and As are calculated from the XSTM images and compared with those obtained by the X-ray CTR scattering measurements. Similarity and difference of both profiles are discussed.
Print ISSN:
1757-8981
Electronic ISSN:
1757-899X
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
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