ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Aluminium oxynitride (AlON) films of variable composition were grown by reactivesputter deposition in a N2/O2 ambient at room temperature and studied for device passivation. Thefilms were deposited on Si and 4H-SiC substrates as well as on SiC PiN diodes. TheAlON/SiO2/SiC stack provided superior interface properties compared to the AlON/SiC structure.Samples with 8% oxygen content, in the AlON film, and subjected to a UV exposure prior todeposition, exhibited the smallest net positive interface charge. A large net negative interfacecharge was observed for samples with 10% oxygen content and for the samples with 8% oxygencontent and subjected to a RCA1 surface clean, prior to deposition. Diodes passivated with AlONfilms demonstrated reduced leakage current compared to as-processed diodes
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.763.pdf
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