Publication Date:
2015-02-26
Description:
We fabricated an efficient hybrid solar cell by spin coating poly(3,4-ethylene-dioxythiophene):polystyrenesulfonate (PEDOT:PSS) on planar multicrystalline Si (mc-Si) thin films. The only 5 μ m thin Si absorber layers were prepared by diode laser crystallization of amorphous Si deposited by electron beam evaporation on glass. On these absorber layers, we studied the effect of SiO x and Al 2 O 3 terminated Si surfaces. The short circuit density and power conversion efficiency (PCE) of the mc-Si/Al 2 O 3 /PEDOT:PSS solar cell increase from 20.6 to 25.4 mA/cm 2 and from 7.3% to 10.3%, respectively, as compared to the mc-Si/SiO x /PEDOT:PSS cell. Al 2 O 3 lowers the interface recombination and improves the adhesion of the polymer film on the hydrophobic mc-Si thin film. Open circuit voltages up to 604 mV were reached. This study demonstrates the highest PCE so far of a hybrid solar cell with a planar thin film Si absorber.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics
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