Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
79 (2001), S. 4432-4434
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In order to provide experimental support for quantum confinement models describing electronic effects in porous silicon (p-Si), the Si 2s and Si 2p plasmon losses have been studied by x-ray photoelectron spectroscopy. The p-Si plasmon energy was found at a value 0.8÷1.6 eV higher than that of bulk Si (17.4 eV), as measured on the cleaned Si substrate as a reference. The magnitude of these shifts suggests possible quantum confinement effects ascribed to the p-Si nanostructures. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1425956
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