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  • 1
    Electronic Resource
    Electronic Resource
    Vertical-cavity surface-emitting lasers with thermally stable electrical characteristics (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2264-2267 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vertical-cavity surface-emitting lasers (VCSELs) with thermally stable electrical characteristics, including slowly changing operating voltages and series resistance, have been achieved over a wide temperature range between 100 and 380 K. A stable and low threshold voltage (1.9 V at 300 K to 3.0 V at 100 K) results from the temperature insensitive carrier transport across the continuously graded heterojunction interfaces of a distributed Bragg mirror, and from the very low series resistance that has been achieved by reducing the spreading resistance of the VCSEL. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358813
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  • 2
    Electronic Resource
    Electronic Resource
    Microstructural contributions to hole transport in p-type GaN:Mg (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2816-2825 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an analysis of hole transport in p-type Mg-doped GaN grown on sapphire substrates by metalorganic chemical vapor deposition. We find that the experimental Hall mobility cannot be described by numerically solving the Boltzmann transport equation. We attribute this discrepancy to the microstructure of GaN:Mg grown on sapphire and present a microstructure-oriented model of the transport of holes in p-type GaN:Mg grown on sapphire. This model provides a simplified picture of the microstructure consisting of two distinct microstructural phases in GaN on sapphire. Using this model for the experimental mobility, the extracted parameters from hole transport measurements suggest a weak direct correlation with the microstructural parameters determined from x-ray diffraction measurements. The experimental mobility of p-type GaN:Mg grown on sapphire can be described as dependent upon the acceptor doping, impurity compensation, and microstructure, including dislocation density, columnar grain size, and grain boundaries. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1334375
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  • 3
    Electronic Resource
    Electronic Resource
    Bulk noise processes and their correlation to structural imperfections in magnesium-doped p-type GaN grown on sapphire (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7892-7895 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the noise properties of p-type Mg-doped GaN using low frequency noise spectroscopy. The epitaxial GaN:Mg films were grown on a sapphire substrate by metalorganic chemical vapor deposition in different laboratories. Generation–recombination (g–r) noise and one-over-f (1/f) noise are observed for temperatures above 250 K. The magnitude of the 1/f noise exceeds the g-r noise magnitude for frequencies less than 30 Hz, and the 1/f noise level is characterized by high values of the Hooge parameter, α(approximate)1–150, indicating a high level of structural imperfection. In addition, the integrated noise power spectral density divided by the voltage squared in the frequency range of 1 to 30 Hz, correlates strongly with the structural imperfection of the sample as measured from the asymmetric rocking curve (ω scan) full width at half maximum. The generation-recombination noise is related to a high concentration trap level with an activation energy of 120±25 meV and a repulsive barrier that is possibly associated with the Mg dopant. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373530
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  • 4
    Electronic Resource
    Electronic Resource
    Passive mode-locking in 1.3 μm two-section InAs quantum dot lasers (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2825-2827 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Passive mode locking was achieved at 1.3 μm in oxide-confined, two-section, bistable quantum dot (QD) lasers with an integrated intracavity QD saturable absorber. Fully mode-locked pulses at a repetition rate of 7.4 GHz with a duration of 17 ps were observed under appropriate bias conditions. No self-pulsation accompanied the mode locking. These results suggest that a carefully designed QD laser is a candidate for ultrashort pulse generation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1371244
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  • 5
    Electronic Resource
    Electronic Resource
    Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 262-264 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Semiconductor ultralow-threshold InAs quantum-dot lasers are investigated operating at 1230–1250 nm at room temperature (laser threshold range is of 16–83 A/cm2 for ground-state emission). The dependence of gain on current is derived from measurements of the threshold current as a function of the cavity length. The ground-state gain appears at very low current: the inversion threshold of ∼13 A/cm2 is a record low value. Analysis of these data for diodes of different molecular beam epitaxial-grown wafers leads to a squared dipole moment of the transition of ∼9.2×10−57 C2 m2 that corresponds to the length of elementary dipole of ∼0.6 nm. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126944
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  • 6
    Electronic Resource
    Electronic Resource
    Molecular-beam epitaxial growth of one-dimensional rows of InAs quantum dots on nanoscale-patterned GaAs (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2630-2632 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-dot-wide rows of InAs quantum dots (QDs) aligned along a [011¯] direction on a 180-nm-period nanoscale-patterned (nanopatterned) GaAs(100) substrate are reported. The nanopatterned substrate is realized by interferometric lithography along with the selective growth mode of GaAs. Orientation-dependent migration and incorporation of In atoms from (111)A to (100) facets on the nanopatterned substrate localizes QD formation exclusively along a 30–40-nm-wide (100) facet defined by neighboring (111)A-type facets within each period. These aligned QDs form face-to-face multi-QDs analogous to multi-quantum-well structures, in a one-dimensional configuration. Spatially controlled formation of QDs with an improved size uniformity on the nanopatterned substrate is presented. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1409947
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  • 7
    Electronic Resource
    Electronic Resource
    Temperature dependence of the mercury telluride-cadmium telluride band offset (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 937-939 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: After reviewing the experimental data on the valence-band offset for HgTe-CdTe heterojunctions, we support previous suggestions of an extreme temperature dependence for this offset with a calculation based on a bond charge model. The model predicts the T dependence of the valence-band offset to be 77% of the difference in the band-gap temperature dependence of the heterojunction constituents. In the HgTe-CdTe system, the opposite signs of the band gap T variations yield an anomalously large increase in the offset of 213 meV between 0 and 300 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100813
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  • 8
    Electronic Resource
    Electronic Resource
    High temperature pulsed and continuous-wave operation and thermally stable threshold characteristics of vertical-cavity surface-emitting lasers grown by metalorganic chemical vapor deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1337-1339 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic and comparative study of the temperature performance of vertical-cavity surface-emitting lasers (VCSELs) is presented to discuss how thermal effects govern their temperature range for cw operation. These include the temperature-induced detuning of the lasing mode from the gain peak, thermal self-heating, and thermal runaway. The power dissipation of the VCSELs and the resultant rise in junction temperature have been measured as a function of the mode detuning. It is shown that low power dissipation is achieved by aligning the cavity mode to the gain peak and introducing continuously graded heterointerfaces throughout the VCSEL structure. By selecting the optimal mode detuning, VCSELs have achieved excellent operating characteristics over a broad range of temperatures, including thermally stable threshold voltage and current, and a very wide temperature range for both pulsed (100–580 K) and continuous-wave (100–400 K) operations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112044
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  • 9
    Electronic Resource
    Electronic Resource
    AlGaInP visible vertical cavity surface emitting lasers operating with gain contributions from the n=2 quantum well transition (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3485-3487 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the characteristics of visible vertical cavity surface emitting laser diodes. Wafers are grown such that the Fabry–Perot resonance wavelength changes with position from 690 to 620 nm, overlapping to varying degrees with the n=1 and n=2 quantum well gain peaks at ∼670 and 650 nm. Gain guided devices are tested across the entire wafer, and pulsed room temperature lasing is observed from 634.6 to 663.2 nm. Our results suggest that gain contributions from the second quantized state are required to overcome high cavity losses in order to achieve lasing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110128
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  • 10
    Electronic Resource
    Electronic Resource
    Transverse junction vertical-cavity surface-emitting laser (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1736-1738 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An all-epitaxial, transverse-junction GaAs/AlGaAs vertical-cavity surface-emitting laser (TJ-VCSEL) incorporating wavelength-resonant periodic gain is reported. Metalorganic chemical vapor deposition is used for epitaxial growth of a structure containing five GaAs quantum wells. The simple p+-p-n+ transverse junction is fabricated using reactive ion etching and diffusion techniques. Contacts are situated on the wafer surface resulting in a nearly planar structure. The device exhibits a room-temperature threshold of 48 mA (pulsed) and a resolution-limited spectral width of 0.11 nm at a 855.8 nm lasing wavelength.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105125
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