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  • 1
    Electronic Resource
    Electronic Resource
    Determination of Organic Peroxides by Iodine Liberation Procedures. (1964)
    s.l. : American Chemical Society
    Analytical chemistry 36 (1964), S. 194-204 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac60207a061
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  • 2
    Electronic Resource
    Electronic Resource
    Determination of Traces of Sulfur in Organic Compounds (1955)
    s.l. : American Chemical Society
    Analytical chemistry 27 (1955), S. 802-805 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac60101a031
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  • 3
    Electronic Resource
    Electronic Resource
    Plasma heating in highly excited GaN/AlGaN multiple quantum wells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2476-2478 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved photoluminescence (PL) spectroscopy was used to investigate carrier distributions in a GaN/AlGaN multiple quantum well (MQW) sample under high excitation intensities necessary to achieve lasing threshold. Room temperature PL spectra showed optical transitions involving both confined and unconfined states in the quantum well structure. Analysis of the experimental results using a microscopic theory, indicates that at high excitation the carrier distributions are characterized by plasma temperatures which are significantly higher than the lattice temperature. The implications of our findings on GaN MQW laser design are also discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122487
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  • 4
    Electronic Resource
    Electronic Resource
    Electron-spin polarization in photoemission from thin AlxGa1−xAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5189-5192 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The polarization of photoemitted electrons from thin AlxGa1−xAs layers grown by molecular-beam epitaxy has been studied as a function of Al concentration by varying x in steps of 0.05 from 0.0 to 0.15. As the fraction x is increased, the wavelength dependence of the polarization shifts toward shorter wavelengths, permitting wavelength tuning of the region of maximum polarization. A maximum electron polarization of 42%–43% is obtained for AlxGa1−xAs samples with x≥0.05 while the maximum polarization of GaAs (x=0) samples reaches 49%. To investigate the lower polarization of AlxGa1−xAs, additional samples have been studied, including a short-period superlattice (GaAs)7 - (AlAs)1 .
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353744
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  • 5
    Electronic Resource
    Electronic Resource
    Time-resolved photoluminescence studies of an ionized donor-bound exciton in GaN (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 513-515 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved photoluminescence (PL) spectroscopy has been used to study the radiative recombination of excitons bound to ionized donors in GaN doped with both Mg and Si at concentrations of 5×1018/cm3 and 1.5×1017/cm3, respectively. Low temperature (T∼10K) time-resolved, as well as integrated PL spectra, identify an ionized donor-bound (Si) exciton peak (D+X) approximately 11.5 meV below and a neutral acceptor-bound exciton (A0X) 20.5 meV below the free exciton peak. Rapid decay of the free exciton emission (≤20 ps) implies that excitons are quickly captured by acceptors and ionized donors. We find the (A0X) emission lifetime is consistent with previous measurements for GaN:Mg epilayers, while the (D+X) lifetime of 160 ps is longer than that of the well studied neutral donor-bound exciton (D0X). The measured (D+X) lifetime, in comparison with (D0X) and (A0X), suggests that the state is stable at low temperature. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123171
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  • 6
    Electronic Resource
    Electronic Resource
    Time-resolved photoluminescence studies of InxGa1−xAs1−yNy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 188-190 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved photoluminescence spectroscopy has been used to investigate carrier decay dynamics in a InxGa1−xAs1−yNy (x∼0.03, y∼0.01) epilayer grown on GaAs by metal organic chemical vapor deposition. Time-resolved photoluminescence (PL) measurements, performed for various excitation intensities and sample temperatures, indicate that the broad PL emission at low temperature is dominated by localized exciton recombination. Lifetimes in the range of 0.07–0.34 ns are measured; these photoluminescence lifetimes are significantly shorter than corresponding values obtained for GaAs. In particular, we observe an emission energy dependence of the decay lifetime at 10 K, whereby the lifetime decreases with increasing emission energy across the PL spectrum. This behavior is characteristic of a distribution of localized states, which arises from alloy fluctuations. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125698
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  • 7
    Electronic Resource
    Electronic Resource
    Time-resolved photoluminescence studies of AlxGa1−xN alloys (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1252-1254 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of AlxGa1−xN alloys with x varied from 0 to 0.35 have been investigated by picosecond time-resolved photoluminescence (PL) spectroscopy. Our results revealed that while the PL intensity decreases with an increase of Al content, the low-temperature PL decay lifetime increases with Al content. These results can be understood in terms of the effects of tail states in the density of states due to alloy fluctuation in the AlxGa1−xN alloys. The Al-content dependence of the energy-tail-state distribution parameter E0, which is an important parameter for determining optical and electrical properties of the AlGaN alloys, has been obtained experimentally. The PL decay lifetime increases with the localization energy and, consequently, increases with Al content. The implications of our findings to III-nitride optoelectronic device applications are also discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126000
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  • 8
    Electronic Resource
    Electronic Resource
    Optical modes within III-nitride multiple quantum well microdisk cavities (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1530-1532 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical resonance modes have been observed in optically pumped microdisk cavities fabricated from 50 Å/50 Å GaN/AlxGa1−xN(x∼0.07) and 45 Å/45 Å InxGa1−xN/GaN(x∼0.15) multiple quantum well structures. Microdisks, approximately 9 μm in diameter and regularly spaced every 50 μm, were formed by an ion beam etch process. Individual disks were pumped at 300 and 10 K with 290 nm laser pulses focused to a spot size much smaller than the disk diameter. Optical modes corresponding to (i) the radial mode type with a spacing of 49–51 meV (both TE and TM) and (ii) the Whispering Gallery mode with a spacing of 15–16 meV were observed in the GaN microdisk cavities. The spacings of these modes are consistent with those expected for modes within a resonant cavity of cylindrical symmetry, refractive index, and dimensions of the microdisks under investigation. The GaN-based microdisk cavity is compared with its GaAs counterpart and implications regarding future GaN-based microdisk lasers are discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120573
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  • 9
    Electronic Resource
    Electronic Resource
    Optical properties of GaN/AlGaN multiple quantum well microdisks (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2898-2900 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An array of microdisks with a diameter of about 9 μm and spacing of 50 μm has been fabricated by dry etching from a 50 Å/50 Å GaN/AlxGa1-xN (x∼0.07) multiple quantum well (MQW) structure grown by reactive molecular beam epitaxy. Optical properties of these microdisks have been studied by picosecond time-resolved photoluminescence (PL) spectroscopy. Photoluminescence emission spectra and decay dynamics were measured at various temperatures and pump intensities. With respect to the original MQWs, we observe strong enhancement of the transition intensity and lifetime for both the intrinsic and barrier transitions. The intrinsic transition is excitonic at low temperatures and exhibits an approximate tenfold increase in both lifetime and PL intensity upon formation of the microdisks. This implies a significant enhancement of quantum efficiency in microdisks and a bright future for III-nitride microcavity lasers. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120209
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  • 10
    Electronic Resource
    Electronic Resource
    Ontogeny of the olfactory code (1986)
    Springer
    Cellular and molecular life sciences 42 (1986), S. 213-223 
    Details
    ISSN: 1420-9071
    Keywords: Olfaction ; olfactory bulb ; olfactory epithelium ; odor-guided behavior development
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01942501
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